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AO4617L PDF预览

AO4617L

更新时间: 2024-11-18 21:19:39
品牌 Logo 应用领域
美国万代 - AOS /
页数 文件大小 规格书
7页 142K
描述
Transistor

AO4617L 技术参数

生命周期:Obsolete包装说明:,
Reach Compliance Code:unknown风险等级:5.84
Base Number Matches:1

AO4617L 数据手册

 浏览型号AO4617L的Datasheet PDF文件第2页浏览型号AO4617L的Datasheet PDF文件第3页浏览型号AO4617L的Datasheet PDF文件第4页浏览型号AO4617L的Datasheet PDF文件第5页浏览型号AO4617L的Datasheet PDF文件第6页浏览型号AO4617L的Datasheet PDF文件第7页 
AO4617  
Complementary Enhancement Mode Field Effect Transistor  
General Description  
Features  
n-channel  
VDS (V) = 40V  
ID = 6A (VGS=10V)  
RDS(ON)  
The AO4617 uses advanced trench  
technology MOSFETs to provide excellen  
RDS(ON) and low gate charge. The  
complementary MOSFETs may be used  
in H-bridge, Inverters and other  
applications.Standard Product AO4617  
is Pb-free (meets ROHS & Sony 259  
specifications). AO4617L is a Green  
Product ordering option. AO4617 and  
AO4617L are electrically identical.  
p-channel  
-40V  
-5A (VGS = -10V)  
RDS(ON)  
< 32m(VGS=10V)  
< 45m(VGS=4.5V)  
< 48m(VGS = -10V)  
< 75m(VGS = -4.5V)  
ESD rating: 3000V (HBM)  
UIS TESTED!  
Rg,Ciss,Coss,Crss Tested  
D1  
S1  
D2  
1
2
3
4
8
7
6
5
S2  
G2  
S1  
G1  
D2  
D2  
D1  
D1  
G2  
G1  
S2  
SOIC-8  
n-channel  
p-channel  
Absolute Maximum Ratings T =25°C unless otherwise noted  
A
Parameter  
Symbol  
Max n-channel  
Max p-channel Units  
VDS  
Drain-Source Voltage  
40  
-40  
V
V
VGS  
Gate-Source Voltage  
Continuous Drain  
Current A  
±20  
±20  
TA=25°C  
TA=70°C  
6
-5  
A
ID  
5
-4  
-25  
Pulsed Drain CurrentB  
IDM  
30  
TA=25°C  
TA=70°C  
2
1.28  
2
PD  
W
Power Dissipation  
Avalanche CurrentB  
1.28  
17  
IAR  
13  
A
Repetitive avalanche energy 0.3mHB  
EAR  
25  
43  
mJ  
°C  
TJ, TSTG  
Junction and Storage Temperature Range  
-55 to 150  
-55 to 150  
Thermal Characteristics: n-channel and p-channel  
Parameter  
Symbol  
Device  
n-ch  
Typ  
48  
Max Units  
62.5 °C/W  
110 °C/W  
50 °C/W  
Maximum Junction-to-AmbientA  
t 10s  
RθJA  
RθJL  
RθJA  
RθJL  
Maximum Junction-to-AmbientA  
n-ch  
74  
Steady-State  
Maximum Junction-to-LeadC  
Steady-State  
n-ch  
35  
Maximum Junction-to-AmbientA  
Maximum Junction-to-AmbientA  
p-ch  
p-ch  
p-ch  
48  
74  
35  
62.5 °C/W  
110 °C/W  
50 °C/W  
t 10s  
Steady-State  
Maximum Junction-to-LeadC  
Steady-State  
Alpha & Omega Semiconductor, Ltd.  

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