Datasheet > AO4618

AO4618

更新时间： 2024-09-15 12:51:27

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		/
页数	文件大小	规格书
9页	1135K
描述
40V Complementary MOSFET

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AO4618 数据手册

AO4618

40V Complementary MOSFET

General Description

The AO4618 uses advanced trench technology to provide

complementary N and P channel MOSFET configuration

Features

excellent R

_DS(ON)and low gate charge. This

is ideal for low Input Voltage inverter application

N-Channel

P-Channel

V_DS= 40V

-40V

I_D= 8A (V_GS=10V)

R_DS(ON)

-7A (V_GS=-10V)

R_DS(ON)

< 19mꢀ (V_GS=10V)

< 27mꢀ (V_GS=4.5V)

< 23mꢀ (VGS=-10V)

< 30mꢀ (VGS=-4.5V)

Top View

n-channel

p-channel

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

V_DS

Max n-channel

Max p-channel

Units

Drain-Source Voltage

Gate-Source Voltage

±20

-40

±20

-7

V_GS

T_A=25°C

T_A=70°C

Continuous Drain

Current

Pulsed Drain Current ^C

Avalanche Current ^C

I_D

-5.5

-35

I_DM

I_AS

-35

Avalanche energy L=0.1mH ^C

E_AS

T_A=25°C

P_D

°C

Power Dissipation ^B

T_A=70°C

1.3

Junction and Storage Temperature Range

T_J, T_STG

-55 to 150

Thermal Characteristics

Parameter

Symbol

Typ

Max

62.5

Units

°C/W

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Ambient ^{A D}

Maximum Junction-to-Lead

≤ 10s

R_θJA

Steady-State

R_θJL

1/9

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