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AO4616L PDF预览

AO4616L

更新时间: 2024-11-21 08:30:59
品牌 Logo 应用领域
美国万代 - AOS 晶体晶体管场效应晶体管
页数 文件大小 规格书
7页 155K
描述
Complementary Enhancement Mode Field Effect Transistor

AO4616L 技术参数

生命周期:Obsolete包装说明:,
Reach Compliance Code:compliant风险等级:5.57
Base Number Matches:1

AO4616L 数据手册

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AO4616  
Complementary Enhancement Mode Field Effect Transistor  
General Description  
Features  
The AO4616 uses advanced trench  
technology MOSFETs to provide excellent  
RDS(ON) and low gate charge. The  
complementary MOSFETs may be used in  
inverter and other applications.Standard  
Product AO4616 is Pb-free (meets ROHS  
& Sony 259 specifications). AO4616L is a  
Green Product ordering option. AO4616  
and AO4616L are electrically identical.  
n-channel  
p-channel  
-30V  
-7.1A (VGS = -10V)  
RDS(ON)  
VDS (V) = 30V  
ID = 8.1A (VGS=10V)  
RDS(ON)  
< 20m(VGS=10V)  
< 28m(VGS=4.5V)  
< 25m(VGS = -10V)  
< 40m(VGS = -4.5V)  
D2  
D1  
1
2
3
4
8
7
6
5
S2  
G2  
S1  
G1  
D2  
D2  
D1  
D1  
G2  
G1  
SOIC-8  
S2  
S1  
n-channel  
p-channel  
Absolute Maximum Ratings T =25°C unless otherwise noted  
A
Parameter  
Symbol  
Max n-channel  
Max p-channel Units  
VDS  
Drain-Source Voltage  
30  
±20  
-30  
±20  
V
V
VGS  
Gate-Source Voltage  
Continuous Drain  
Current A  
Pulsed Drain CurrentB  
TA=25°C  
TA=70°C  
8.1  
-7.1  
A
ID  
6.5  
-5.6  
IDM  
30  
-30  
TA=25°C  
TA=70°C  
2
2
PD  
W
Power Dissipation  
1.28  
-55 to 150  
1.28  
-55 to 150  
TJ, TSTG  
Junction and Storage Temperature Range  
°C  
Thermal Characteristics: n-channel and p-channel  
Parameter  
Symbol  
Device  
Typ  
48  
74  
Max Units  
62.5 °C/W  
110 °C/W  
60 °C/W  
Maximum Junction-to-AmbientA  
n-ch  
n-ch  
n-ch  
t 10s  
Steady-State  
Maximum Junction-to-LeadC  
Steady-State  
RθJA  
Maximum Junction-to-AmbientA  
RθJL  
RθJA  
35  
Maximum Junction-to-AmbientA  
p-ch  
p-ch  
p-ch  
48  
74  
35  
62.5 °C/W  
110 °C/W  
40 °C/W  
t 10s  
Maximum Junction-to-AmbientA  
Steady-State  
Maximum Junction-to-LeadC  
Steady-State  
RθJL  
Alpha & Omega Semiconductor, Ltd.  

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