AO4700L

更新时间： 2024-11-06 08:30:59

品牌	Logo	应用领域
美国万代 - AOS		晶体肖特基二极管晶体管场效应晶体管
页数	文件大小	规格书
5页	165K
描述
N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode

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中文翻译

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AO4700L 数据手册

AO4700

N-Channel Enhancement Mode Field Effect Transistor

with Schottky Diode

General Description

Features

V_DS(V) = 30V

The AO4700 uses advanced trench technology to provide

excellent R_DS(ON)and low gate charge. A Schottky diode is

provided to facilitate the implementation of a bidirectional

blocking switch, or for non-synchronous DC-DC conversion

applications. Standard Product AO4700 is Pb-free (meets

ROHS & Sony 259 specifications). AO4700L is a Green

Product ordering option. AO4700 and AO4700L are

electrically identical.

I_D= 6.9A (V_GS= 10V)

_DS(ON)< 28mΩ (V_GS= 10V)

_DS(ON)< 42mΩ (V_GS= 4.5V)

SCHOTTKY

V_DS(V) = 30V, I_F= 4A, V_F<0.5V@3A

SOIC-8

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

MOSFET

Schottky

Units

V_DS

Drain-Source Voltage

Gate-Source Voltage

V_GS

±20

6.9

T_A=25°C

T_A=70°C

I_D

Continuous Drain Current ^A

Pulsed Drain Current ^B

5.8

I_DM

V_KA

Schottky reverse voltage

T_A=25°C

T_A=70°C

I_F

I_FM

Continuous Forward Current ^A

Pulsed Forward Current ^B

2.6

T_A=25°C

T_A=70°C

P_D

°C

Power Dissipation

1.28

T_J, T_STG

Junction and Storage Temperature Range

-55 to 150

Parameter: Thermal Characteristics MOSFET

Symbol

Typ

Max

Units

Maximum Junction-to-Ambient ^A

62.5

t ≤ 10s

R_θJA

Steady-State

Maximum Junction-to-Lead ^C

Steady-State

°C/W

110

R_θJL

Thermal Characteristics Schottky

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Lead ^C

Steady-State

t ≤ 10s

62.5

R_θJA

R_θJL

Steady-State

110

12 3 4 5

中文翻译

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