Datasheet > AO4629

AO4629

更新时间： 2024-09-16 12:51:27

品牌	Logo	应用领域
美国万代 - AOS		/
页数	文件大小	规格书
9页	855K
描述
30V Complementary MOSFET

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AO4629 数据手册

AO4629

30V Complementary MOSFET

General Description

Product Summary

AO4629 uses advanced trench technology to provide

excellent R_DS(ON)and low gate charge. This

N-Channel

P-Channel

V_DS= 30V

-30V

complementary N and P channel MOSFET configuration is

ideal for low Input Voltage inverter applications.

I_D= 6A (V_GS=10V)

R_DS(ON)

-5.5A (V_GS=-10V)

R_DS(ON)

< 30mΩ (V_GS=10V)

< 42mΩ (V_GS=4.5V)

< 41mΩ (V_GS=-10V)

< 74mΩ (V_GS=-4.5V)

100% UIS Tested

100% R_gTested

100% UIS Tested

100% R_gTested

SOIC-8

Top View

Bottom View

Top View

Pin1

n-channel

p-channel

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Max n-channel

Max p-channel

Units

Drain-Source Voltage

V_DS

-30

Gate-Source Voltage

V_GS

±20

-5.5

-4.5

-25

T_A=25°C

T_A=70°C

Continuous Drain

Current

Pulsed Drain Current ^C

Avalanche Current ^C

I_D

I_DM

I_AS, I_AR

E_AS, E_AR

Avalanche energy L=0.1mH ^C

T_A=25°C

Power Dissipation ^B

T_A=70°C

P_D

°C

1.3

Junction and Storage Temperature Range

T_J, T_STG

-55 to 150

Thermal Characteristics

Parameter

Symbol

Typ

Max

62.5

Units

°C/W

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Ambient ^{A D}

Maximum Junction-to-Lead

≤ 10s

R_θJA

Steady-State

R_θJL

Rev 2: Nov 2011

www.aosmd.com

Page 1 of 9

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