AO4615
Complementary Enhancement Mode Field Effect Transistor
General Description
Features
The AO4615 uses advanced trench
technology MOSFETs to provide
excellent RDS(ON) and low gate charge.
The complementary MOSFETs may be
used to form a level shifted high side
switch, and for a host of other
applications. It is ESD protected.
Standard product AO4615 is Pb-free
(meets ROHS & Sony 259
n-channel
p-channel
-30V
-5.7A (VGS=10V)
VDS (V) = 30V
ID = 7.2A (VGS=10V)
RDS(ON)
RDS(ON)
< 24mΩ (VGS=10V)
< 40mΩ (VGS=4.5V)
< 39mΩ (VGS = -10V)
< 62mΩ (VGS = -4.5V)
ESD rating: 1500V (HBM)
P-channel MOSFET has an additional ROC < 1MΩ for
open circuit protection.
specifications). AO4615L is a Green
Product ordering option. AO4615 and
AO4615L are electrically identical
D1
D2
S2
1
2
3
4
8
7
6
5
S2
G2
S1
G1
D2
D2
D1
D1
G2
G1
ROC
S1
SOIC-8
n-channel
p-channel
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Max n-channel
Max p-channel Units
VDS
Drain-Source Voltage
30
±20
7.2
-30
±20
V
V
VGS
Gate-Source Voltage
Continuous Drain
Current A
TA=25°C
TA=70°C
-5.7
-4.9
-30
A
ID
6.1
Pulsed Drain Current B
IDM
30
TA=25°C
TA=70°C
2
2
PD
W
Power Dissipation
1.44
15
1.44
20
Avalanche Current B
IAR
A
Repetitive avalanche energy 0.1mH B
EAR
11
20
mJ
°C
TJ, TSTG
Junction and Storage Temperature Range
-55 to 150
-55 to 150
Thermal Characteristics: n-channel and p-channel
Parameter
Symbol
Typ
Max
Units
A
t ≤ 10s
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
n-ch
n-ch
n-ch
55
92
37
62.5 °C/W
110 °C/W
50 °C/W
RθJA
A
Steady-State
Steady-State
t ≤ 10s
C
RθJL
RθJA
RθJL
Maximum Junction-to-Lead
A
A
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
p-ch
p-ch
p-ch
48
87
37
62.5 °C/W
110 °C/W
50 °C/W
Steady-State
Steady-State
C
Maximum Junction-to-Lead
Alpha & Omega Semiconductor, Ltd.