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AO4615 PDF预览

AO4615

更新时间: 2024-11-18 08:30:59
品牌 Logo 应用领域
美国万代 - AOS 晶体晶体管场效应晶体管
页数 文件大小 规格书
7页 192K
描述
Complementary Enhancement Mode Field Effect Transistor

AO4615 数据手册

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AO4615  
Complementary Enhancement Mode Field Effect Transistor  
General Description  
Features  
The AO4615 uses advanced trench  
technology MOSFETs to provide  
excellent RDS(ON) and low gate charge.  
The complementary MOSFETs may be  
used to form a level shifted high side  
switch, and for a host of other  
applications. It is ESD protected.  
Standard product AO4615 is Pb-free  
(meets ROHS & Sony 259  
n-channel  
p-channel  
-30V  
-5.7A (VGS=10V)  
VDS (V) = 30V  
ID = 7.2A (VGS=10V)  
RDS(ON)  
RDS(ON)  
< 24m(VGS=10V)  
< 40m(VGS=4.5V)  
< 39m(VGS = -10V)  
< 62m(VGS = -4.5V)  
ESD rating: 1500V (HBM)  
P-channel MOSFET has an additional ROC < 1Mfor  
open circuit protection.  
specifications). AO4615L is a Green  
Product ordering option. AO4615 and  
AO4615L are electrically identical  
D1  
D2  
S2  
1
2
3
4
8
7
6
5
S2  
G2  
S1  
G1  
D2  
D2  
D1  
D1  
G2  
G1  
ROC  
S1  
SOIC-8  
n-channel  
p-channel  
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
Max n-channel  
Max p-channel Units  
VDS  
Drain-Source Voltage  
30  
±20  
7.2  
-30  
±20  
V
V
VGS  
Gate-Source Voltage  
Continuous Drain  
Current A  
TA=25°C  
TA=70°C  
-5.7  
-4.9  
-30  
A
ID  
6.1  
Pulsed Drain Current B  
IDM  
30  
TA=25°C  
TA=70°C  
2
2
PD  
W
Power Dissipation  
1.44  
15  
1.44  
20  
Avalanche Current B  
IAR  
A
Repetitive avalanche energy 0.1mH B  
EAR  
11  
20  
mJ  
°C  
TJ, TSTG  
Junction and Storage Temperature Range  
-55 to 150  
-55 to 150  
Thermal Characteristics: n-channel and p-channel  
Parameter  
Symbol  
Typ  
Max  
Units  
A
t 10s  
Maximum Junction-to-Ambient  
Maximum Junction-to-Ambient  
n-ch  
n-ch  
n-ch  
55  
92  
37  
62.5 °C/W  
110 °C/W  
50 °C/W  
RθJA  
A
Steady-State  
Steady-State  
t 10s  
C
RθJL  
RθJA  
RθJL  
Maximum Junction-to-Lead  
A
A
Maximum Junction-to-Ambient  
Maximum Junction-to-Ambient  
p-ch  
p-ch  
p-ch  
48  
87  
37  
62.5 °C/W  
110 °C/W  
50 °C/W  
Steady-State  
Steady-State  
C
Maximum Junction-to-Lead  
Alpha & Omega Semiconductor, Ltd.  

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