AO4614A

更新时间： 2024-09-13 12:51:31

品牌	Logo	应用领域
美国万代 - AOS		晶体晶体管场效应晶体管
页数	文件大小	规格书
7页	152K
描述
Complementary Enhancement Mode Field Effect Transistor

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AO4614A 数据手册

AO4614A

Complementary Enhancement Mode Field Effect Transistor

General Description

Features

n-channel

V_DS(V) = 40V

I_D= 6A (V_GS=10V)

R_DS(ON)

The AO4614A uses advanced trench

technology MOSFETs to provide excellent

R_DS(ON)and low gate charge. The

complementary MOSFETs may be used

in H-bridge, Inverters and other

applications. Standard Product AO4614A

is Pb-free (meets ROHS & Sony 259

specifications).

p-channel

-40V

-5A (V_GS= -10V)

R_DS(ON)

< 31mΩ (V_GS=10V)

< 45mΩ (V_GS=4.5V)

< 45mΩ (V_GS= -10V)

< 63mΩ (V_GS= -4.5V)

SOIC-8

p-channel

n-channel

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Max n-channel

Max p-channel

Units

V_DS

Drain-Source Voltage

Gate-Source Voltage

-40

V_GS

±20

T_A=25°C

T_A=70°C

-5

Continuous Drain

Current ^A

Pulsed Drain Current ^B

I_D

-4

-20

I_DM

T_A=25°C

T_A=70°C

P_D

Power Dissipation

1.28

-55 to 150

1.28

T_J, T_STG

Junction and Storage Temperature Range

-55 to 150

°C

Thermal Characteristics: n-channel and p-channel

Parameter

Symbol

Device

Typ

Max Units

62.5 °C/W

110 °C/W

50 °C/W

62.5 °C/W

110 °C/W

50 °C/W

Maximum Junction-to-Ambient ^A

n-ch

p-ch

t ≤ 10s

R_θJA

Maximum Junction-to-Ambient ^A

Steady-State

Maximum Junction-to-Lead ^C

Steady-State

R_θJL

R_θJA

R_θJL

Maximum Junction-to-Ambient ^A

t ≤ 10s

Steady-State

Maximum Junction-to-Lead ^C

Steady-State

Alpha & Omega Semiconductor, Ltd.

www.aosmd.com

12 3 4 5 6 7

中文翻译

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