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AO4614 PDF预览

AO4614

更新时间: 2024-10-30 08:30:59
品牌 Logo 应用领域
美国万代 - AOS 晶体晶体管场效应晶体管
页数 文件大小 规格书
7页 143K
描述
Complementary Enhancement Mode Field Effect Transistor

AO4614 数据手册

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AO4614  
Complementary Enhancement Mode Field Effect Transistor  
General Description  
Features  
n-channel  
VDS (V) = 40V  
ID = 6A (VGS=10V)  
RDS(ON)  
The AO4614 uses advanced trench  
technology MOSFETs to provide excellent  
RDS(ON) and low gate charge. The  
complementary MOSFETs may be used  
in H-bridge, Inverters and other  
applications. Standard Product AO4614  
is Pb-free (meets ROHS & Sony 259  
specifications). AO4614L is a Green  
Product ordering option. AO4614 and  
AO4614L are electrically identical.  
p-channel  
-40V  
-5A (VGS = -10V)  
RDS(ON)  
< 31m(VGS=10V)  
< 45m(VGS=4.5V)  
< 45m(VGS = -10V)  
< 63m(VGS = -4.5V)  
D1  
D2  
1
2
3
4
8
7
6
5
S2  
G2  
S1  
G1  
D2  
D2  
D1  
D1  
G1  
G2  
S1  
S2  
SOIC-8  
p-channel  
n-channel  
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
Max n-channel  
Max p-channel  
Units  
VDS  
Drain-Source Voltage  
Gate-Source Voltage  
40  
-40  
V
V
VGS  
±20  
±20  
TA=25°C  
TA=70°C  
6
-5  
Continuous Drain  
Current A  
Pulsed Drain Current B  
A
ID  
5
20  
-4  
-20  
IDM  
TA=25°C  
TA=70°C  
2
2
PD  
W
Power Dissipation  
1.28  
-55 to 150  
1.28  
TJ, TSTG  
Junction and Storage Temperature Range  
-55 to 150  
°C  
Thermal Characteristics: n-channel and p-channel  
Parameter  
Symbol  
Device  
Typ  
48  
74  
35  
48  
74  
35  
Max Units  
62.5 °C/W  
110 °C/W  
50 °C/W  
62.5 °C/W  
110 °C/W  
50 °C/W  
Maximum Junction-to-Ambient A  
n-ch  
n-ch  
n-ch  
p-ch  
p-ch  
p-ch  
t 10s  
RθJA  
Maximum Junction-to-Ambient A  
Steady-State  
Maximum Junction-to-Lead C  
Steady-State  
RθJL  
RθJA  
RθJL  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Ambient A  
t 10s  
Steady-State  
Maximum Junction-to-Lead C  
Steady-State  
Alpha & Omega Semiconductor, Ltd.  

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