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AO4613 PDF预览

AO4613

更新时间: 2024-11-18 12:51:27
品牌 Logo 应用领域
飞思卡尔 - FREESCALE /
页数 文件大小 规格书
7页 566K
描述
30V Dual P N-Channel MOSFET

AO4613 数据手册

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AO4613  
30V Dual P + N-Channel MOSFET  
General Description  
The AO4613 uses advanced trench technology  
MOSFETs to provide excellent RDS(ON) and low  
be used to form a level shifted high side switch,  
gate charge. The complementary MOSFETs may  
and for a host of other applications.  
Features  
N-Channel  
P-Channel  
-30V  
-6.1A (VGS=10V)  
VDS (V) = 30V  
ID = 7.2A (VGS=10V)  
RDS(ON)  
RDS(ON)  
< 24m(VGS=10V)  
< 40m(VGS=4.5V)  
< 37m(VGS = -10V)  
< 60m(VGS = -4.5V)  
SOIC-8  
D2  
D1  
Top View  
S2  
D2  
D2  
D1  
D1  
G2  
S1  
G1  
G2  
G1  
S2  
S1  
n-channel  
p-channel  
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
Max n-channel  
Max p-channel  
Units  
Drain-Source Voltage  
Gate-Source Voltage  
VDS  
30  
±20  
7.2  
-30  
V
V
VGS  
±20  
-6.1  
TA=25°C  
TA=70°C  
Continuous Drain  
Current A  
Pulsed Drain Current B  
ID  
A
6.1  
-5.1  
IDM  
30  
-30  
TA=25°C  
TA=70°C  
2
2
PD  
W
Power Dissipation  
1.44  
15  
1.44  
20  
Avalanche Current B  
IAR  
A
mJ  
°C  
Repetitive avalanche energy 0.1mH B  
EAR  
11  
20  
Junction and Storage Temperature Range  
TJ, TSTG  
-55 to 150  
-55 to 150  
Thermal Characteristics: n-channel and p-channel  
Parameter  
Symbol  
Typ  
n-ch  
n-ch  
n-ch  
Max  
Units  
°C/W  
°C/W  
°C/W  
Maximum Junction-to-Ambient A  
t 10s  
55  
92  
37  
62.5  
RθJA  
RθJL  
RθJA  
RθJL  
Maximum Junction-to-Ambient A  
Steady-State  
110  
50  
Maximum Junction-to-Lead C  
Steady-State  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Ambient A  
t 10s  
p-ch  
p-ch  
p-ch  
48  
84  
37  
62.5  
110  
50  
°C/W  
°C/W  
°C/W  
Steady-State  
Maximum Junction-to-Lead C  
Steady-State  
www.freescale.net.cn  

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