Datasheet > AO4613_10

AO4613_10

更新时间： 2024-11-21 12:51:31

品牌	Logo	应用领域
美国万代 - AOS		/
页数	文件大小	规格书
7页	219K
描述
30V Dual P N-Channel MOSFET

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AO4613_10 数据手册

AO4613

30V Dual P + N-Channel MOSFET

General Description

Product Summary

The AO4613 uses advanced trench technology

MOSFETs to provide excellent R_DS(ON)and low

gate charge. The complementary MOSFETs may

be used to form a level shifted high side switch,

and for a host of other applications.

N-Channel

P-Channel

-30V

-6.1A (V_GS=10V)

V_DS(V) = 30V

I_D= 7.2A (V_GS=10V)

R_DS(ON)

< 24mΩ (V_GS=10V)

< 40mΩ (V_GS=4.5V)

< 37mΩ (V_GS= -10V)

< 60mΩ (V_GS= -4.5V)

ESD Protected

100% UIS Tested

100% Rg Tested

SOIC-8

Top View

Bottom View

Top View

n-channel

Pin1

p-channel

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Max n-channel

Max p-channel

Units

Drain-Source Voltage

Gate-Source Voltage

V_DS

±20

7.2

-30

±20

V_GS

T_A=25°C

T_A=70°C

-6.1

-5.1

-30

Continuous Drain

Current ^A

Pulsed Drain Current ^B

I_D

6.1

I_DM

T_A=25°C

T_A=70°C

P_D

Power Dissipation

1.44

Avalanche Current ^B

I_AR

°C

Repetitive avalanche energy 0.1mH ^B

E_AR

Junction and Storage Temperature Range

T_J, T_STG

-55 to 150

Thermal Characteristics: n-channel and p-channel

Parameter

Symbol

Typ

n-ch

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

t ≤ 10s

62.5

110

R_θJA

R_θJL

R_θJA

R_θJL

Maximum Junction-to-Ambient ^A

Steady-State

Maximum Junction-to-Lead ^C

Steady-State

Maximum Junction-to-Ambient ^A

t ≤ 10s

p-ch

62.5

110

°C/W

Steady-State

Maximum Junction-to-Lead ^C

Steady-State

Alpha & Omega Semiconductor, Ltd.

12 3 4 5 6 7

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