AO4612L

更新时间： 2024-11-18 08:30:59

品牌	Logo	应用领域
美国万代 - AOS		晶体晶体管场效应晶体管
页数	文件大小	规格书
7页	141K
描述
Complementary Enhancement Mode Field Effect Transistor

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中文翻译

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技术参数
数据手册

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AO4612L 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.04
Is Samacsys：	N	Base Number Matches：	1

AO4612L 数据手册

AO4612

Complementary Enhancement Mode Field Effect Transistor

General Description

Features

n-channel

V_DS(V) = 60V

I_D= 4.5A (V_GS=10V)

R_DS(ON)

p-channel

-60V

The AO4612 uses advanced trench

technology MOSFETs to provide excellent

R_DS(ON)and low gate charge. The

-3.2A (V_GS= -10V)

R_DS(ON)

complementary MOSFETs may be used

in H-bridge, Inverters and other

< 56mΩ (V_GS=10V)

< 77mΩ (V_GS=4.5V)

< 105mΩ (V_GS= -10V)

< 135mΩ (V_GS= -4.5V)

applications. Standard product AO4612 is

Pb-free (meets ROHS & Sony 259

specifications). AO4612L is a Green

Product ordering option. AO4612 and

AO4612L are electrically identical.

SOIC-8

p-channel

n-channel

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Max n-channel

Max p-channel

Units

V_DS

Drain-Source Voltage

Gate-Source Voltage

±20

-60

±20

V_GS

T_A=25°C

T_A=70°C

4.5

-3.2

Continuous Drain

Current ^A

Pulsed Drain Current ^B

I_D

3.6

-2.6

I_DM

-20

T_A=25°C

T_A=70°C

P_D

Power Dissipation

1.28

-55 to 150

1.28

-55 to 150

T_J, T_STG

Junction and Storage Temperature Range

°C

Thermal Characteristics: n-channel and p-channel

Parameter

Symbol

Device

Typ

Max Units

62.5 °C/W

110 °C/W

60 °C/W

62.5 °C/W

110 °C/W

40 °C/W

Maximum Junction-to-Ambient ^A

n-ch

p-ch

t ≤ 10s

R_θJA

Maximum Junction-to-Ambient ^A

Steady-State

Maximum Junction-to-Lead ^C

Steady-State

R_θJL

R_θJA

R_θJL

Maximum Junction-to-Ambient ^A

t ≤ 10s

Steady-State

Maximum Junction-to-Lead ^C

Steady-State

Alpha & Omega Semiconductor, Ltd.

12 3 4 5 6 7

中文翻译

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AO4614B	AOS	获取价格	Complementary Enhancement Mode Field Effect Transistor
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