Datasheet > AO4609L

AO4609L

更新时间： 2024-11-19 21:54:27

品牌	Logo	应用领域
其他 - ETC		晶体晶体管场效应晶体管
页数	文件大小	规格书
12页	692K
描述
Complementary Enhancement Mode Field Effect Transistor

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中文翻译

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AO4609L 数据手册

July 2003

AO4609

Complementary Enhancement Mode Field Effect Transistor

General Description

Features

n-channel

V_DS(V) = 30V

I_D= 8.5A

p-channel

-30V

The AO4609 uses advanced trench

technology MOSFETs to provide

excellent R_DS(ON)and low gate charge.

The complementary MOSFETs may be

used to form a level shifted high side

switch, and for a host of other

applications.

-3A

R_DS(ON)

< 18mΩ (V_GS=10V)

< 28mΩ (V_GS=4.5V)

< 130mΩ (V_GS= 10V)

< 180mΩ (V_GS= 4.5V)

< 260mΩ (V_GS= 2.5V)

SOIC-8

p-channel

n-channel

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Max n-channel

Max p-channel Units

V_DS

Drain-Source Voltage

±20

-30

±12

V_GS

Gate-Source Voltage

Continuous Drain

Current ^A

T_A=25°C

T_A=70°C

8.5

6.6

-3

I_D

I_DM

-2.4

-6

Pulsed Drain Current ^B

T_A=25°C

T_A=70°C

P_D

Power Dissipation

1.28

-55 to 150

1.28

-55 to 150

T_J, T_STG

Junction and Storage Temperature Range

°C

Thermal Characteristics: n-channel and p-channel

Parameter

Symbol

Device

Typ

Max Units

62.5 °C/W

110 °C/W

40 °C/W

62.5 °C/W

110 °C/W

48 °C/W

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Lead ^C

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Lead ^C

n-ch

t ≤ 10s

R_θJA

Steady-State

t ≤ 10s

Steady-State

R_θJL

R_θJA

R_θJL

p-ch

12 3 4 5 6 7...12

中文翻译

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