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AO4612 PDF预览

AO4612

更新时间: 2024-10-30 12:51:27
品牌 Logo 应用领域
飞思卡尔 - FREESCALE /
页数 文件大小 规格书
9页 698K
描述
60V Complementary Enhancement 60V Complementary Enhancement

AO4612 数据手册

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AO4612  
60V Complementary Enhancement  
Mode Field Effect Transistor  
General Description  
The AO4612 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate  
charge. The complementary MOSFETs may be  
used in H-bridge, Inverters and other applications.  
Features  
n-channel  
p-channel  
VDS (V) = 60V  
-60V  
ID = 4.5A (VGS=10V)  
-3.2A (VGS = -10V)  
RDS(ON)  
RDS(ON)  
< 56m(VGS=10V)  
< 77m(VGS=4.5V)  
< 105m(VGS = -10V)  
< 135m(VGS = -4.5V)  
SOIC-8  
D1  
S1  
D2  
1
2
3
4
8
7
6
5
S2  
G2  
S1  
G1  
D2  
D2  
D1  
D1  
G2  
G1  
S2  
SOIC-8  
n-channel  
p-channel  
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
Max n-channel  
Max p-channel  
Units  
VDS  
Drain-Source Voltage  
60  
-60  
±20  
V
VGS  
Gate-Source Voltage  
Continuous Drain  
Current A  
±20  
4.5  
V
A
TA=25°C  
TA=70°C  
-3.2  
ID  
3.6  
-2.6  
Pulsed Drain Current B  
IDM  
20  
-20  
TA=25°C  
TA=70°C  
2
2
PD  
W
Power Dissipation  
1.28  
-55 to 150  
1.28  
-55 to 150  
TJ, TSTG  
Junction and Storage Temperature Range  
°C  
Thermal Characteristics: n-channel and p-channel  
Parameter  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Lead C  
Symbol  
Typ  
48  
Max  
62.5  
90  
Units  
°C/W  
°C/W  
°C/W  
t 10s  
RθJA  
RθJL  
Steady-State  
Steady-State  
74  
35  
40  
1/9  
www.freescale.net.cn  

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