Datasheet > AO4612

AO4612

更新时间： 2024-11-18 12:51:27

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		/
页数	文件大小	规格书
9页	698K
描述
60V Complementary Enhancement 60V Complementary Enhancement

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AO4612 数据手册

AO4612

60V Complementary Enhancement

Mode Field Effect Transistor

General Description

The AO4612 uses advanced trench technology MOSFETs to provide excellent R_DS(ON)and low gate

charge. The complementary MOSFETs may be

used in H-bridge, Inverters and other applications.

Features

n-channel

p-channel

V_DS(V) = 60V

-60V

I_D= 4.5A (V_GS=10V)

-3.2A (V_GS= -10V)

R_DS(ON)

< 56mΩ (V_GS=10V)

< 77mΩ (V_GS=4.5V)

< 105mΩ (V_GS= -10V)

< 135mΩ (V_GS= -4.5V)

SOIC-8

n-channel

p-channel

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Max n-channel

Max p-channel

Units

V_DS

Drain-Source Voltage

-60

±20

V_GS

Gate-Source Voltage

Continuous Drain

Current ^A

±20

4.5

T_A=25°C

T_A=70°C

-3.2

I_D

3.6

-2.6

Pulsed Drain Current ^B

I_DM

-20

T_A=25°C

T_A=70°C

P_D

Power Dissipation

1.28

-55 to 150

1.28

-55 to 150

T_J, T_STG

Junction and Storage Temperature Range

°C

Thermal Characteristics: n-channel and p-channel

Parameter

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Lead ^C

Symbol

Typ

Max

62.5

Units

°C/W

t ≤ 10s

R_θJA

R_θJL

Steady-State

1/9

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12 3 4 5 6 7...9

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与AO4612相关器件

型号	品牌	获取价格	描述	数据表
AO4612_10	AOS	获取价格	60V Complementary Enhancement Mode Field Effect Transistor
AO4612L	AOS	获取价格	Complementary Enhancement Mode Field Effect Transistor
AO4613	AOS	获取价格	Complementary Enhancement Mode Field Effect Transistor
AO4613	FREESCALE	获取价格	30V Dual P N-Channel MOSFET
AO4613_10	AOS	获取价格	30V Dual P N-Channel MOSFET
AO4613L	AOS	获取价格	Complementary Enhancement Mode Field Effect Transistor
AO4614	AOS	获取价格	Complementary Enhancement Mode Field Effect Transistor
AO4614	UMW	获取价格	种类:N+P-Channel;漏源电压（Vdss）:N：40V ;P：-40V;持续漏极电
AO4614A	AOS	获取价格	Complementary Enhancement Mode Field Effect Transistor
AO4614A	FREESCALE	获取价格	N & P-Channel 40-V (D-S) MOSFET Fast switching speed