Datasheet > AO4610L

AO4610L

更新时间： 2024-11-18 08:30:59

品牌	Logo	应用领域
美国万代 - AOS		晶体晶体管场效应晶体管
页数	文件大小	规格书
9页	209K
描述
Complementary Enhancement Mode Field Effect Transistor

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AO4610L 数据手册

AO4610

Complementary Enhancement Mode Field Effect Transistor

General Description

Features

n-channel

V_DS(V) = 30V

I_D= 8.5A(V_GS=10V)

R_DS(ON)

The AO4610 uses advanced trench

technology MOSFETs to provide excellent

R_DS(ON)and low gate charge. The

p-channel

-30V

-7.1A(V_GS= -10V)

R_DS(ON)

complementary MOSFETs may be used in

inverter and other applications. A Schottky

diode is co-packaged with the n-channel FET

to minimize body diode losses.Standard

Product AO4610 is Pb-free (meets ROHS &

Sony 259 specifications). AO4610L is a

Green Product ordering option. AO4610

and AO4610L are electrically identical.

< 18mΩ (V_GS=10V)

< 28mΩ (V_GS=4.5V)

V_F<0.5V@1A

< 25mΩ (V_GS= -10V)

< 40mΩ (V_GS= -4.5V)

S2/A

D2/K

SOIC-8

n-channel

p-channel

Absolute Maximum Ratings T =25°C unless otherwise noted

Parameter

Symbol

Max n-channel

Max p-channel Units

V_DS

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain

Current ^A

±20

-30

±20

V_GS

T_A=25°C

T_A=70°C

8.5

-7.1

I_D

6.6

-5.6

Pulsed Drain Current^B

I_DM

-30

T_A=25°C

T_A=70°C

P_D

Power Dissipation

1.28

-55 to 150

1.28

-55 to 150

T_J, T_STG

Junction and Storage Temperature Range

°C

Parameter

Symbol

Maximum Schottky

Units

V_DS

Reverse Voltage

Continuous Forward

Current ^A

T_A=25°C

T_A=70°C

I_D

Pulsed Forward Current^B

I_DM

T_A=25°C

T_A=70°C

P_D

Power Dissipation^A

1.28

-55 to 150

T_J, T_STG

Junction and Storage Temperature Range

°C

Alpha & Omega Semiconductor, Ltd.

12 3 4 5 6 7...9

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