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AO4610 PDF预览

AO4610

更新时间: 2024-10-30 08:30:59
品牌 Logo 应用领域
美国万代 - AOS 晶体晶体管场效应晶体管
页数 文件大小 规格书
9页 209K
描述
Complementary Enhancement Mode Field Effect Transistor

AO4610 数据手册

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AO4610  
Complementary Enhancement Mode Field Effect Transistor  
General Description  
Features  
n-channel  
VDS (V) = 30V  
ID = 8.5A(VGS=10V)  
RDS(ON)  
The AO4610 uses advanced trench  
technology MOSFETs to provide excellent  
RDS(ON) and low gate charge. The  
p-channel  
-30V  
-7.1A(VGS = -10V)  
RDS(ON)  
complementary MOSFETs may be used in  
inverter and other applications. A Schottky  
diode is co-packaged with the n-channel FET  
to minimize body diode losses.Standard  
Product AO4610 is Pb-free (meets ROHS &  
Sony 259 specifications). AO4610L is a  
Green Product ordering option. AO4610  
and AO4610L are electrically identical.  
< 18m(VGS=10V)  
< 28m(VGS=4.5V)  
VF<0.5V@1A  
< 25m(VGS = -10V)  
< 40m(VGS = -4.5V)  
D1  
D2  
1
2
3
4
8
7
6
5
S2/A  
G2  
S1  
D2/K  
D2/K  
D1  
K
A
G1  
D1  
G1  
G2  
S2  
S1  
SOIC-8  
n-channel  
p-channel  
Absolute Maximum Ratings T =25°C unless otherwise noted  
A
Parameter  
Symbol  
Max n-channel  
Max p-channel Units  
VDS  
Drain-Source Voltage  
Gate-Source Voltage  
Continuous Drain  
Current A  
30  
±20  
-30  
±20  
V
V
VGS  
TA=25°C  
TA=70°C  
8.5  
-7.1  
A
ID  
6.6  
-5.6  
Pulsed Drain CurrentB  
IDM  
30  
-30  
TA=25°C  
TA=70°C  
2
2
PD  
W
Power Dissipation  
1.28  
-55 to 150  
1.28  
-55 to 150  
TJ, TSTG  
Junction and Storage Temperature Range  
°C  
Parameter  
Symbol  
Maximum Schottky  
Units  
VDS  
Reverse Voltage  
30  
V
Continuous Forward  
Current A  
TA=25°C  
TA=70°C  
3
A
ID  
2
20  
Pulsed Forward CurrentB  
IDM  
TA=25°C  
TA=70°C  
2
PD  
W
Power DissipationA  
1.28  
-55 to 150  
TJ, TSTG  
Junction and Storage Temperature Range  
°C  
Alpha & Omega Semiconductor, Ltd.  

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