AO4607L

更新时间： 2024-11-20 08:30:59

品牌	Logo	应用领域
美国万代 - AOS		晶体晶体管场效应晶体管
页数	文件大小	规格书
8页	197K
描述
Complementary Enhancement Mode Field Effect Transistor

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技术参数
数据手册

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AO4607L 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.61
Base Number Matches：	1

AO4607L 数据手册

AO4607

Complementary Enhancement Mode Field Effect Transistor

General Description

Features

The AO4607 uses advanced trench

technology MOSFETs to provide excellen

R_DS(ON)and low gate charge. The

complementary MOSFETs may be used

in inverter and other applications. A

Schottky diode is co-packaged with the n-

channel FET to minimize body diode

losses. AO4607 is Pb-free (meets ROHS

& Sony 259 specifications). AO4607L is

a Green Product ordering option.

AO4607 and AO4607L are electrically

identical.

n-channel

p-channel

-30V

-6A (V_GS=1-0V)

R_DS(ON)

V_DS(V) = 30V

I_D= 6.9A (V_GS=10V)

R_DS(ON)

< 28mΩ (V_GS=10V)

< 42mΩ (V_GS=4.5V)

< 35mΩ (V_GS= -10V)

< 58mΩ (V_GS=- 4.5V)

SCHOTTKY

VDS (V) = 30V, IF = 3A, VF<0.5V@1A

S2/A

D2/K

SOIC-8

n-channel

p-channel

Absolute Maximum Ratings T =25°C unless otherwise noted

Parameter

Symbol

Max n-channel

Max p-channel Units

V_DS

Drain-Source Voltage

-30

V_GS

Gate-Source Voltage

Continuous Drain

Current ^A

Pulsed Drain Current^B

±20

6.9

±20

T_A=25°C

T_A=70°C

-6

I_D

5.8

-5

-30

I_DM

T_A=25°C

T_A=70°C

P_D

Power Dissipation

1.28

-55 to 150

1.28

T_J, T_STG

Junction and Storage Temperature Range

-55 to 150

°C

Parameter

Symbol

Maximum Schottky

Units

V_DS

Reverse Voltage

Continuous Forward

Current ^A

Pulsed Diode Forward Current^B

T_A=25°C

T_A=70°C

I_D

I_DM

T_A=25°C

P_D

Power Dissipation^A

T_A=70°C

1.28

-55 to 150

T_J, T_STG

Junction and Storage Temperature Range

°C

Alpha & Omega Semiconductor, Ltd.

12 3 4 5 6 7 8

中文翻译

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