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AO4603 PDF预览

AO4603

更新时间: 2024-10-02 08:30:59
品牌 Logo 应用领域
爱特美尔 - ATMEL 晶体晶体管场效应晶体管
页数 文件大小 规格书
7页 143K
描述
Complementary Enhancement Mode Field Effect Transistor

AO4603 数据手册

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AO4603  
Complementary Enhancement Mode Field Effect Transistor  
General Description  
Features  
n-channel  
VDS (V) = 30V  
ID = 4.7A (VGS=10V)  
RDS(ON)  
p-channel  
-30V  
The AO4603 uses advanced trench technology  
MOSFETs to provide excellent RDS(ON) and low  
gate charge. The complementary MOSFETs  
may be used to form a level shifted high side  
switch, and for a host of other applications.  
Standard product AO4603 is Pb-free (meets  
ROHS & Sony 259 specifications). AO4603L is  
a Green Product ordering option. AO4603 and  
AO4603L are electrically identical.  
-5.8A (VGS = -10V)  
RDS(ON)  
< 55m(VGS=10V)  
< 70m(VGS=4.5V)  
< 110m(VGS = 2.5V)  
< 35m(VGS = -10V)  
< 58m(VGS = -4.5V)  
D1  
D2  
1
2
3
4
8
7
6
5
S2  
G2  
S1  
G1  
D2  
D2  
D1  
D1  
G2  
G1  
S2  
S1  
SOIC-8  
n-channel  
p-channel  
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
Max n-channel  
Max p-channel  
Units  
VDS  
Drain-Source Voltage  
Gate-Source Voltage  
30  
-30  
±20  
V
V
VGS  
±12  
TA=25°C  
TA=70°C  
4.7  
-5.8  
Continuous Drain  
Current A  
Pulsed Drain Current B  
A
ID  
4
30  
-4.9  
IDM  
-40  
TA=25°C  
TA=70°C  
2
2
PD  
W
Power Dissipation  
1.44  
-55 to 150  
1.44  
-55 to 150  
TJ, TSTG  
Junction and Storage Temperature Range  
°C  
Thermal Characteristics: n-channel and p-channel  
Parameter  
Symbol  
Device  
Typ  
52  
78  
48  
50  
73  
31  
Max Units  
62.5 °C/W  
110 °C/W  
50 °C/W  
62.5 °C/W  
110 °C/W  
35 °C/W  
Maximum Junction-to-Ambient A  
n-ch  
n-ch  
n-ch  
p-ch  
p-ch  
p-ch  
t 10s  
RθJA  
Maximum Junction-to-Ambient A  
Steady-State  
Maximum Junction-to-Lead C  
Steady-State  
RθJL  
RθJA  
RθJL  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Ambient A  
t 10s  
Steady-State  
Maximum Junction-to-Lead C  
Steady-State  
Alpha & Omega Semiconductor, Ltd.  

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