5秒后页面跳转
AO4603 PDF预览

AO4603

更新时间: 2024-11-18 08:30:59
品牌 Logo 应用领域
爱特美尔 - ATMEL 晶体晶体管场效应晶体管
页数 文件大小 规格书
7页 143K
描述
Complementary Enhancement Mode Field Effect Transistor

AO4603 数据手册

 浏览型号AO4603的Datasheet PDF文件第2页浏览型号AO4603的Datasheet PDF文件第3页浏览型号AO4603的Datasheet PDF文件第4页浏览型号AO4603的Datasheet PDF文件第5页浏览型号AO4603的Datasheet PDF文件第6页浏览型号AO4603的Datasheet PDF文件第7页 
AO4603  
Complementary Enhancement Mode Field Effect Transistor  
General Description  
Features  
n-channel  
VDS (V) = 30V  
ID = 4.7A (VGS=10V)  
RDS(ON)  
p-channel  
-30V  
The AO4603 uses advanced trench technology  
MOSFETs to provide excellent RDS(ON) and low  
gate charge. The complementary MOSFETs  
may be used to form a level shifted high side  
switch, and for a host of other applications.  
Standard product AO4603 is Pb-free (meets  
ROHS & Sony 259 specifications). AO4603L is  
a Green Product ordering option. AO4603 and  
AO4603L are electrically identical.  
-5.8A (VGS = -10V)  
RDS(ON)  
< 55m(VGS=10V)  
< 70m(VGS=4.5V)  
< 110m(VGS = 2.5V)  
< 35m(VGS = -10V)  
< 58m(VGS = -4.5V)  
D1  
D2  
1
2
3
4
8
7
6
5
S2  
G2  
S1  
G1  
D2  
D2  
D1  
D1  
G2  
G1  
S2  
S1  
SOIC-8  
n-channel  
p-channel  
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
Max n-channel  
Max p-channel  
Units  
VDS  
Drain-Source Voltage  
Gate-Source Voltage  
30  
-30  
±20  
V
V
VGS  
±12  
TA=25°C  
TA=70°C  
4.7  
-5.8  
Continuous Drain  
Current A  
Pulsed Drain Current B  
A
ID  
4
30  
-4.9  
IDM  
-40  
TA=25°C  
TA=70°C  
2
2
PD  
W
Power Dissipation  
1.44  
-55 to 150  
1.44  
-55 to 150  
TJ, TSTG  
Junction and Storage Temperature Range  
°C  
Thermal Characteristics: n-channel and p-channel  
Parameter  
Symbol  
Device  
Typ  
52  
78  
48  
50  
73  
31  
Max Units  
62.5 °C/W  
110 °C/W  
50 °C/W  
62.5 °C/W  
110 °C/W  
35 °C/W  
Maximum Junction-to-Ambient A  
n-ch  
n-ch  
n-ch  
p-ch  
p-ch  
p-ch  
t 10s  
RθJA  
Maximum Junction-to-Ambient A  
Steady-State  
Maximum Junction-to-Lead C  
Steady-State  
RθJL  
RθJA  
RθJL  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Ambient A  
t 10s  
Steady-State  
Maximum Junction-to-Lead C  
Steady-State  
Alpha & Omega Semiconductor, Ltd.  

与AO4603相关器件

型号 品牌 获取价格 描述 数据表
AO4603L ATMEL

获取价格

Complementary Enhancement Mode Field Effect Transistor
AO4604 AOS

获取价格

Complementary Enhancement Mode Field Effect Transistor
AO4604_09 AOS

获取价格

Complementary Enhancement Mode Field Effect Transistor
AO4604A AOS

获取价格

Transistor
AO4606 AOS

获取价格

Complementary Enhancement Mode Field Effect Transistor
AO4606 UMW

获取价格

种类:N+P-Channel;漏源电压(Vdss):N:30V P:-30V;持续漏极电流
AO4606 HOTTECH

获取价格

SOP-8
AO4606_12 AOS

获取价格

30V Complementary MOSFET
AO4606L AOS

获取价格

Transistor
AO4607 AOS

获取价格

Complementary Enhancement Mode Field Effect Transistor