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AO4606 PDF预览

AO4606

更新时间: 2024-10-01 22:05:43
品牌 Logo 应用领域
美国万代 - AOS 晶体晶体管场效应晶体管
页数 文件大小 规格书
9页 431K
描述
Complementary Enhancement Mode Field Effect Transistor

AO4606 技术参数

生命周期:Active包装说明:,
Reach Compliance Code:compliant风险等级:5.53
Base Number Matches:1

AO4606 数据手册

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Feb 2003  
AO4606  
Complementary Enhancement Mode Field Effect Transistor  
General Description  
Features  
n-channel  
VDS (V) = 30V  
ID = 6.9A  
p-channel  
-30V  
The AO4606 uses advanced trench  
technology MOSFETs to provide excellent  
RDS(ON) and low gate charge. The  
complementary MOSFETs may be used  
to form a level shifted high side switch,  
and for a host of other applications.  
-6A  
RDS(ON)  
RDS(ON)  
< 28m(VGS=10V)  
< 42m(VGS=4.5V)  
< 35m(VGS = 10V)  
< 58m(VGS = 4.5V)  
D1  
D2  
1
2
3
4
8
7
6
5
S2  
G2  
S1  
G1  
D2  
D2  
D1  
D1  
G1  
G2  
S1  
S2  
SOIC-8  
p-channel  
n-channel  
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
Max n-channel  
Max p-channel  
Units  
V
V
VDS  
Drain-Source Voltage  
Gate-Source Voltage  
30  
±20  
-30  
VGS  
±20  
TA=25°C  
TA=70°C  
6.9  
5.8  
30  
-6  
-5  
-30  
Continuous Drain  
Current A  
A
ID  
IDM  
Pulsed Drain Current B  
TA=25°C  
TA=70°C  
2
2
1.44  
-55 to 150  
PD  
W
Power Dissipation  
1.44  
-55 to 150  
TJ, TSTG  
Junction and Storage Temperature Range  
°C  
Thermal Characteristics: n-channel and p-channel  
Parameter  
Symbol  
Device  
Typ  
48  
74  
35  
48  
74  
35  
Max Units  
62.5 °C/W  
110 °C/W  
60 °C/W  
62.5 °C/W  
110 °C/W  
40 °C/W  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Lead C  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Lead C  
n-ch  
n-ch  
n-ch  
p-ch  
p-ch  
p-ch  
t 10s  
RθJA  
Steady-State  
Steady-State  
t 10s  
Steady-State  
Steady-State  
RθJL  
RθJA  
RθJL  
Alpha & Omega Semiconductor, Ltd.  

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