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AO4606_12 PDF预览

AO4606_12

更新时间: 2024-11-20 12:24:35
品牌 Logo 应用领域
美国万代 - AOS /
页数 文件大小 规格书
9页 551K
描述
30V Complementary MOSFET

AO4606_12 数据手册

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AO4606  
30V Complementary MOSFET  
General Description  
Product Summary  
The AO4606 uses advanced trench technology  
MOSFETs to provide excellent RDS(ON) and low gate  
charge. The complementary MOSFETs may be used to  
form a level shifted high side switch, and for a host of  
other applications.  
N-Channel  
P-Channel  
VDS= 30V  
-30V  
ID= 6A (VGS=10V)  
RDS(ON)  
-6.5A (VGS=-10V)  
RDS(ON)  
< 30m(VGS=10V)  
< 42m(VGS=4.5V)  
< 28m(VGS=-10V)  
< 44m(VGS=-4.5V)  
100% UIS Tested  
100% Rg Tested  
100% UIS Tested  
100% Rg Tested  
SOIC-8  
D2  
D1  
Top View  
Bottom View  
Top View  
S2  
G2  
S1  
G1  
D2  
D2  
D1  
D1  
1
2
3
4
8
7
6
5
G2  
G1  
S2  
S1  
Pin1  
n-channel  
p-channel  
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
VDS  
Max n-channel  
Max p-channel  
Units  
Drain-Source Voltage  
Gate-Source Voltage  
30  
±20  
6
-30  
±20  
-6.5  
-5.3  
-30  
V
V
VGS  
TA=25°C  
TA=70°C  
Continuous Drain  
Current  
Pulsed Drain Current C  
Avalanche Current C  
ID  
A
5
IDM  
30  
IAS, IAR  
EAS, EAR  
10  
5
23  
26  
2
A
Avalanche energy L=0.1mH C  
mJ  
TA=25°C  
2
PD  
W
°C  
Power Dissipation B  
TA=70°C  
1.3  
1.3  
Junction and Storage Temperature Range  
TJ, TSTG  
-55 to 150  
Thermal Characteristics  
Parameter  
Symbol  
Typ  
48  
Max  
62.5  
90  
Units  
°C/W  
°C/W  
°C/W  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Ambient A D  
Maximum Junction-to-Lead  
t
10s  
RθJA  
Steady-State  
Steady-State  
74  
RθJL  
32  
40  
Rev 10: April 2012  
www.aosmd.com  
Page 1 of 9  

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