Datasheet > AO4606_12

AO4606_12

更新时间： 2024-10-30 12:24:35

品牌	Logo	应用领域
美国万代 - AOS		/
页数	文件大小	规格书
9页	551K
描述
30V Complementary MOSFET

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AO4606_12 数据手册

AO4606

30V Complementary MOSFET

General Description

Product Summary

The AO4606 uses advanced trench technology

MOSFETs to provide excellent R_DS(ON)and low gate

charge. The complementary MOSFETs may be used to

form a level shifted high side switch, and for a host of

other applications.

N-Channel

P-Channel

V_DS= 30V

-30V

I_D= 6A (V_GS=10V)

R_DS(ON)

-6.5A (V_GS=-10V)

R_DS(ON)

< 30mꢀ (V_GS=10V)

< 42mꢀ (V_GS=4.5V)

< 28mꢀ (VGS=-10V)

< 44mꢀ (VGS=-4.5V)

100% UIS Tested

100% R_gTested

100% UIS Tested

100% R_gTested

SOIC-8

Top View

Bottom View

Top View

Pin1

n-channel

p-channel

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

V_DS

Max n-channel

Max p-channel

Units

Drain-Source Voltage

Gate-Source Voltage

±20

-30

±20

-6.5

-5.3

-30

V_GS

T_A=25°C

T_A=70°C

Continuous Drain

Current

Pulsed Drain Current ^C

Avalanche Current ^C

I_D

I_DM

I_AS, I_AR

E_AS, E_AR

Avalanche energy L=0.1mH ^C

T_A=25°C

P_D

°C

Power Dissipation ^B

T_A=70°C

1.3

Junction and Storage Temperature Range

T_J, T_STG

-55 to 150

Thermal Characteristics

Parameter

Symbol

Typ

Max

62.5

Units

°C/W

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Ambient ^{A D}

Maximum Junction-to-Lead

≤ 10s

R_θJA

Steady-State

R_θJL

Rev 10: April 2012

www.aosmd.com

Page 1 of 9

12 3 4 5 6 7...9

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