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AO4604A PDF预览

AO4604A

更新时间: 2024-11-20 19:52:03
品牌 Logo 应用领域
美国万代 - AOS /
页数 文件大小 规格书
7页 186K
描述
Transistor

AO4604A 技术参数

生命周期:Obsolete包装说明:,
Reach Compliance Code:unknown风险等级:5.84
Base Number Matches:1

AO4604A 数据手册

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AO4604A  
Complementary Enhancement Mode Field Effect Transistor  
General Description  
Features  
n-channel  
VDS (V) = 30V  
ID = 7.4A (VGS=10V)  
RDS(ON)  
The AO4604A uses advanced trench  
technology MOSFETs to provide excellent  
RDS(ON) and low gate charge. The  
complementary MOSFETs may be used in  
inverter and other applications. Standard  
Product AO4604A is Pb-free (meets ROHS  
& Sony 259 specifications).  
p-channel  
-30V  
-5.2A (VGS = -10V)  
RDS(ON)  
< 24m(VGS=10V)  
< 36m(VGS=4.5V)  
< 48m(VGS = -10V)  
< 74m(VGS = -4.5V)  
D2  
D1  
1
2
3
4
8
7
6
5
S2  
G2  
S1  
G1  
D2  
D2  
D1  
D1  
G2  
G1  
SOIC-8  
S2  
S1  
n-channel  
p-channel  
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
Max n-channel  
Max p-channel  
Units  
VDS  
Drain-Source Voltage  
30  
-30  
V
VGS  
Gate-Source Voltage  
Continuous Drain  
Current F  
±20  
±20  
-5.2  
-4.2  
-25  
V
A
TA=25°C  
TA=70°C  
7.4  
ID  
6
B
Pulsed Drain Current  
IDM  
35  
TA=25°C  
TA=70°C  
2
1.3  
2
PD  
W
Power DissipationA  
1.3  
B
Avalanche Current  
IAR  
13  
11  
A
B
Repetitive avalanche energy 0.3mH  
Junction and Storage Temperature Range  
EAR  
25  
18  
mJ  
°C  
TJ, TSTG  
-55 to 150  
-55 to 150  
Thermal Characteristics: n-channel and p-channel  
Parameter  
Maximum Junction-to-Ambient  
Maximum Junction-to-Ambient  
Symbol  
Device  
Typ  
50  
75  
Max Units  
62.5 °C/W  
90 °C/W  
40 °C/W  
A
t 10s  
n-ch  
n-ch  
n-ch  
RθJA  
A
Steady-State  
Steady-State  
t 10s  
Steady-State  
Steady-State  
C
RθJL  
RθJA  
RθJL  
34  
Maximum Junction-to-Lead  
A
A
Maximum Junction-to-Ambient  
Maximum Junction-to-Ambient  
p-ch  
p-ch  
p-ch  
50  
82  
34  
62.5 °C/W  
90 °C/W  
40 °C/W  
C
Maximum Junction-to-Lead  
Alpha & Omega Semiconductor, Ltd.  
www.aosmd.com  

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