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AO4604_09 PDF预览

AO4604_09

更新时间: 2024-10-02 12:51:31
品牌 Logo 应用领域
美国万代 - AOS 晶体晶体管场效应晶体管
页数 文件大小 规格书
9页 343K
描述
Complementary Enhancement Mode Field Effect Transistor

AO4604_09 数据手册

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AO4604  
Complementary Enhancement Mode Field Effect Transistor  
General Description  
Features  
n-channel  
VDS (V) = 30V  
ID = 6.9A (VGS=10V)  
RDS(ON)  
The AO4604 uses advanced trench  
technology MOSFETs to provide excellen  
RDS(ON) and low gate charge. The  
complementary MOSFETs may be used  
in power inverters, and other applications.  
AO4604 and AO4604L are electrically  
identical.  
p-channel  
-30V  
-5A (VGS = -10V)  
RDS(ON)  
< 28m(VGS=10V)  
< 42m(VGS=4.5V)  
< 52m(VGS = -10V)  
< 87m(VGS = -4.5V)  
-RoHS Compliant  
-AO4604L is Halogen Free  
100% Rg Tested!  
SOIC-8  
D1  
S1  
D2  
1
2
3
4
8
7
6
5
S2  
G2  
S1  
G1  
D2  
D2  
D1  
D1  
G1  
G2  
S2  
SOIC-8  
p-channel  
n-channel  
Top View  
Bottom View  
Absolute Maximum Ratings T =25°C unless otherwise noted  
A
Parameter  
Symbol  
Max n-channel  
Max p-channel Units  
VDS  
Drain-Source Voltage  
Gate-Source Voltage  
Continuous Drain  
Current A  
30  
-30  
±20  
V
V
VGS  
±20  
TA=25°C  
TA=70°C  
6.9  
5.8  
-5  
A
ID  
-4.2  
Pulsed Drain CurrentB  
IDM  
30  
-20  
TA=25°C  
TA=70°C  
2
2
PD  
W
Power Dissipation  
1.44  
-55 to 150  
1.44  
-55 to 150  
TJ, TSTG  
Junction and Storage Temperature Range  
°C  
Thermal Characteristics: n-channel and p-channel  
Parameter  
Symbol  
Device  
n-ch  
Typ  
48  
Max Units  
62.5 °C/W  
110 °C/W  
40 °C/W  
Maximum Junction-to-AmbientA  
t 10s  
RθJA  
RθJL  
RθJA  
RθJL  
Maximum Junction-to-AmbientA  
n-ch  
74  
Steady-State  
Maximum Junction-to-LeadC  
Steady-State  
n-ch  
35  
Maximum Junction-to-AmbientA  
Maximum Junction-to-AmbientA  
p-ch  
p-ch  
p-ch  
48  
74  
35  
62.5 °C/W  
110 °C/W  
40 °C/W  
t 10s  
Steady-State  
Maximum Junction-to-LeadC  
Steady-State  
Alpha & Omega Semiconductor, Ltd.  

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