Datasheet > AO4606

AO4606

更新时间： 2024-10-03 17:15:27

品牌	Logo	应用领域
友台半导体 - UMW		/
页数	文件大小	规格书
8页	2289K
描述
种类:N+P-Channel;漏源电压（Vdss）:N：30V P：-30V;持续漏极电流（Id）（在25°C时）:N:6A;P: -7.6A;Vgs(th)(V):±20;漏源导通电阻:N:8mΩ; P:32mΩ@10V

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AO4606 数据手册

UMW

AO4606

30V N+P-Channel Enhancement Mode MOSFET

Description

uses advanced trench technology

The AO4406

to provide excellent R_DS(ON), low gate charge and

operation with gate voltages as low as 4.5V. This

device is suitable for use as a

Battery protection or in other Switching application.

General Features

V_DS= 30V I_D=6 A

R_DS(ON)< 28mΩ @ V_GS=10V R_DS(ON)< 42mΩ @ V_GS=4.5V

V_DS= -30V I_D=-7.6 A

R_DS(ON)< 32mΩ @ V_GS=10V R_DS(ON)< 40mΩ @ V_GS=4.5V

Absolute Maximum Ratings (T_C=25℃unless otherwise noted)

Rating

Symbol

VDS

Parameter

N-Ch

P-Ch

-30

Units

Drain-Source Voltage

VGS

±20

Gate-Source Voltage

Continuous Drain Current, V_GS@ 10V¹

-7.6

-5.9

I_D@T_C=25℃

4.5

I_D@T_C=100℃

IDM

Pulsed Drain Current²

Single Pulse Avalanche Energy³

Avalanche Current

2.0

-15

EAS

IAS

-30

2.0

Total Power Dissipation⁴

P_D@T_C=25℃

TSTG

Storage Temperature Range

Operating Junction Temperature Range

Thermal Resistance Junction-Ambient ¹

Thermal Resistance Junction-Case¹

-55 to 150

---

-55 to 150

℃

T_J

-55 to 150

R_θJA

R_θJC

℃/W

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