Datasheet > AO4606

AO4606

更新时间： 2024-11-19 18:10:07

品牌	Logo	应用领域
合科泰 - HOTTECH		/
页数	文件大小	规格书
10页	1036K
描述
SOP-8

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中文翻译

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AO4606 数据手册

AO4606

COMPLEMENTARY MOSFET

FEATURES

 VDS=30V,ID=6A,RDS(ON)≤30mΩ@VGS=10V

 VDS=-30V,ID=-6.5A,RDS(ON)≤28mΩ@VGS=-10V

 Low gate charge and Ultra low on-resistance

 For level shifted high side switch and for a host of other applications.

 Surface Mount device

SOP-8

MECHANICAL DATA



Case: SOP-8

Case Material: Molded Plastic. UL flammability

Classification Rating: 94V-0

Weight: 0.3 grams (approximate)

MAXIMUM RATINGS (T_A= 25°C unless otherwise noted)

Parameter

Drain-source voltage

Gate-source voltage

Symbol

Max N-channel

Max P-channel

Unit

±20

-30

±20

-6.5

-5.3

-30

V_GS

T_A= 25°C

T_A= 70°C

Continuous drain current

I_D

Pulsed drain current

Avalanche current

Avalanche energy L=0.1mH

I_DM

I_AS,I_AR

E_AS,E_AR

T_A= 25°C

T_A= 70°C

Power dissipation

P_D

1.3

Thermal resistance from Junction to ambient

Thermal resistance from Junction to Lead

Junction temperature

R_θ

T_J

T_STG

°C/W

°C

150

Storage temperature

-55 ~+150

N-CHANNEL ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise specified)

Parameter

Symbol

Min

Typ

Max

Unit

Conditions

V(BR)DSS*

Drain-Source breakdown voltage

Zero gate voltage drain current

Gate-body leakage current

Gate-threshold voltage

VGS=0V, ID=250μA

I_DSS

I_GSS

μA V_DS=30V,

μA V_DS=0V,

V^GS=±20V

VGS=0V

±100

2.4

V_GS(th)

1.2

1.8

VDS=VGS, ID=250μA

On-State Drain Current

I_D(ON)

V_DS=5V,

VGS=10V

33.5

VGS=10V, ID=6A

VGS=10V, ID=6A, TJ=125°C

V^GS=4.5V, I^D=5A

VDS=5V, ID=6A

mΩ

Drain-source on-resistance

R_DS(ON)*

g_FS

V_SD

I_S

C_iss

C_oss

C_rss

R_g

Forward transconductance

Diode forward voltage

Diode forward current

Input capacitance

Output capacitance

Reverse transfer capacitance

Gate resistance

Total gate charge

Gate-source charge

Gate-drain charge

Turn-on delay time

Turn-on rise time

Turn-off delay time

Turn-off fall time

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

*Pulse test ; Pulse width ≤300µs, Duty cycle ≤ 0.5% .

0.76

2.5

310

4.9

IS=1A, VGS=0V

255

3.25

2.55

5.2

0.85

1.3

4.5

2.5

14.5

3.5

8.5

V_{DS=15V, VGS=0V, f=1MHz}

V_{DS=0V, VGS=0V, f=1MHz}

VGS=4.5V,VDS=15V,ID=6A

Q_g

V^GS=10V,V^DS=15V,I^D=6A

Q_gs

Q_gd

t_d(on)

t_r

t_d(off)

t_f

VGS=10V, VDS=15V,

RGEN=3Ω,RL=2.5Ω

t_rr

Q_rr

IF=6A, dI/dt=100A/ s

2.2

IF=6A, dI/dt=100A/ s

1 / 10

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与AO4606相关器件

型号	品牌	获取价格	描述	数据表
AO4606_12	AOS	获取价格	30V Complementary MOSFET
AO4606L	AOS	获取价格	Transistor
AO4607	AOS	获取价格	Complementary Enhancement Mode Field Effect Transistor
AO4607L	AOS	获取价格	Complementary Enhancement Mode Field Effect Transistor
AO4609	FREESCALE	获取价格	P & N-Channel 30-V (D-S) MOSFET High power and current handling capability
AO4609	AOS	获取价格	Complementary Enhancement Mode Field Effect Transistor
AO4609L	ETC	获取价格	Complementary Enhancement Mode Field Effect Transistor
AO4610	FREESCALE	获取价格	P & N-Channel 30-V (D-S) MOSFET High power and current handling capability
AO4610	AOS	获取价格	Complementary Enhancement Mode Field Effect Transistor
AO4610L	AOS	获取价格	Complementary Enhancement Mode Field Effect Transistor

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