5秒后页面跳转
AO4601 PDF预览

AO4601

更新时间: 2024-11-20 08:30:59
品牌 Logo 应用领域
美国万代 - AOS 晶体晶体管场效应晶体管
页数 文件大小 规格书
7页 305K
描述
Complementary Enhancement Mode Field Effect Transistor

AO4601 数据手册

 浏览型号AO4601的Datasheet PDF文件第2页浏览型号AO4601的Datasheet PDF文件第3页浏览型号AO4601的Datasheet PDF文件第4页浏览型号AO4601的Datasheet PDF文件第5页浏览型号AO4601的Datasheet PDF文件第6页浏览型号AO4601的Datasheet PDF文件第7页 
AO4601  
Complementary Enhancement Mode Field Effect Transistor  
General Description  
Features  
n-channel  
VDS (V) = 30V  
p-channel  
-30V  
The AO4601 uses advanced trench technology  
MOSFETs to provide excellent RDS(ON) and low  
gate charge. The complementary MOSFETs may  
be used to form a level shifted high side switch,  
and for a host of other applications. Standard  
Product AO4601 is Pb-free (meets ROHS & Sony  
259 specifications). AO4601L is a Green Product  
ordering option. AO4601 and AO4601L are  
ID = 4.7A (VGS=10V) -8A (VGS = -20V)  
RDS(ON)  
RDS(ON)  
< 18m(VGS = -20V)  
< 55m(VGS=10V)  
< 70m(VGS=4.5V)  
< 110m(VGS = 2.5V)  
< 19m(VGS = -10V)  
D1  
D2  
1
2
3
4
8
7
6
5
S2  
G2  
S1  
G1  
D2  
D2  
D1  
D1  
G1  
G2  
S1  
S2  
SOIC-8  
p-channel  
n-channel  
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
Max n-channel  
Max p-channel  
Units  
VDS  
Drain-Source Voltage  
Gate-Source Voltage  
30  
-30  
±25  
V
V
VGS  
±12  
TA=25°C  
TA=70°C  
4.7  
-8  
Continuous Drain  
Current A  
Pulsed Drain Current B  
A
ID  
4
30  
-6.9  
IDM  
-50  
TA=25°C  
TA=70°C  
2
2
PD  
W
Power Dissipation  
1.44  
-55 to 150  
1.44  
-55 to 150  
TJ, TSTG  
Junction and Storage Temperature Range  
°C  
Thermal Characteristics: n-channel and p-channel  
Parameter  
Symbol  
Device  
Typ  
52  
78  
48  
50  
73  
31  
Max Units  
62.5 °C/W  
110 °C/W  
60 °C/W  
62.5 °C/W  
110 °C/W  
40 °C/W  
Maximum Junction-to-Ambient A  
n-ch  
n-ch  
n-ch  
p-ch  
p-ch  
p-ch  
t 10s  
RθJA  
Maximum Junction-to-Ambient A  
Steady-State  
Maximum Junction-to-Lead C  
Steady-State  
RθJL  
RθJA  
RθJL  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Ambient A  
t 10s  
Steady-State  
Maximum Junction-to-Lead C  
Steady-State  
Alpha & Omega Semiconductor, Ltd.  

与AO4601相关器件

型号 品牌 获取价格 描述 数据表
AO4601L AOS

获取价格

Complementary Enhancement Mode Field Effect Transistor
AO4603 ATMEL

获取价格

Complementary Enhancement Mode Field Effect Transistor
AO4603 AOS

获取价格

Transistor
AO4603L ATMEL

获取价格

Complementary Enhancement Mode Field Effect Transistor
AO4604 AOS

获取价格

Complementary Enhancement Mode Field Effect Transistor
AO4604_09 AOS

获取价格

Complementary Enhancement Mode Field Effect Transistor
AO4604A AOS

获取价格

Transistor
AO4606 AOS

获取价格

Complementary Enhancement Mode Field Effect Transistor
AO4606 UMW

获取价格

种类:N+P-Channel;漏源电压(Vdss):N:30V P:-30V;持续漏极电流
AO4606 HOTTECH

获取价格

SOP-8