AO4601L

更新时间： 2024-10-02 08:30:59

品牌	Logo	应用领域
美国万代 - AOS		晶体晶体管场效应晶体管
页数	文件大小	规格书
7页	305K
描述
Complementary Enhancement Mode Field Effect Transistor

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技术参数
数据手册

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AO4601L 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.84
Base Number Matches：	1

AO4601L 数据手册

AO4601

Complementary Enhancement Mode Field Effect Transistor

General Description

Features

n-channel

V_DS(V) = 30V

p-channel

-30V

The AO4601 uses advanced trench technology

MOSFETs to provide excellent R_DS(ON)and low

gate charge. The complementary MOSFETs may

be used to form a level shifted high side switch,

and for a host of other applications. Standard

Product AO4601 is Pb-free (meets ROHS & Sony

259 specifications). AO4601L is a Green Product

ordering option. AO4601 and AO4601L are

I_D= 4.7A (VGS=10V) -8A (VGS = -20V)

R_DS(ON)

< 18mΩ (V_GS= -20V)

< 55mΩ (V_GS=10V)

< 70mΩ (V_GS=4.5V)

< 110mΩ (V_GS= 2.5V)

< 19mΩ (V_GS= -10V)

SOIC-8

p-channel

n-channel

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Max n-channel

Max p-channel

Units

V_DS

Drain-Source Voltage

Gate-Source Voltage

-30

±25

V_GS

±12

T_A=25°C

T_A=70°C

4.7

-8

Continuous Drain

Current ^A

Pulsed Drain Current ^B

I_D

-6.9

I_DM

-50

T_A=25°C

T_A=70°C

P_D

Power Dissipation

1.44

-55 to 150

1.44

-55 to 150

T_J, T_STG

Junction and Storage Temperature Range

°C

Thermal Characteristics: n-channel and p-channel

Parameter

Symbol

Device

Typ

Max Units

62.5 °C/W

110 °C/W

60 °C/W

62.5 °C/W

110 °C/W

40 °C/W

Maximum Junction-to-Ambient ^A

n-ch

p-ch

t ≤ 10s

R_θJA

Maximum Junction-to-Ambient ^A

Steady-State

Maximum Junction-to-Lead ^C

Steady-State

R_θJL

R_θJA

R_θJL

Maximum Junction-to-Ambient ^A

t ≤ 10s

Steady-State

Maximum Junction-to-Lead ^C

Steady-State

Alpha & Omega Semiconductor, Ltd.

12 3 4 5 6 7

中文翻译

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