Datasheet > AO4406A

AO4406A

更新时间： 2024-09-11 17:15:51

品牌	Logo	应用领域
友台半导体 - UMW		/
页数	文件大小	规格书
5页	1511K
描述
种类:N-Channel;漏源电压（Vdss）:30V;持续漏极电流（Id）（在25°C时）:18A;Vgs(th)(V):±20;漏源导通电阻:13mΩ@10V;漏源导通电阻:16mΩ@4.5V

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AO4406A 数据手册

UMW

AO4406A

11N06C

30V N-Channel Enhancement Mode MOSFET

Description

The AO4406A uses advanced trench technology

to provide excellent R_DS(ON), low gate charge and

operation with gate voltages as low as 4.5V. This

device is suitable for use as a

Battery protection or in other Switching application.

General Features

V_DS= 30V I_D=12 A

R_DS(ON)< 13mΩ @ V_GS=10V

Application

Battery protection

Load switch

Uninterruptible power supply

Absolute Maximum Ratings

Symbol

Parameter

Rating

Units

VDS

Drain-Source Voltage

VGS

±20

Gate-Source Voltage

Continuous Drain Current, V_GS@ 10V¹

I_D@T_A=25℃

I_D@T_A=70℃

IDM

Continuous Drain Current, V_GS@ 10V¹

Pulsed Drain Current²

EAS

Single Pulse Avalanche Energy³

Avalanche Current

IAS

Total Power Dissipation⁴

4.5

P_D@T_A=25℃

TSTG

T_J

Storage Temperature Range

Operating Junction Temperature Range

Thermal Resistance Junction-ambient ¹

Thermal Resistance Junction-Case¹

-55 to 150

℃

R_θJA

℃/W

R_θJC

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