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AO4406AL PDF预览

AO4406AL

更新时间: 2024-09-10 06:37:15
品牌 Logo 应用领域
美国万代 - AOS 晶体小信号场效应晶体管开关光电二极管PC
页数 文件大小 规格书
6页 154K
描述
N-Channel Enhancement Mode Field Effect Transistor

AO4406AL 技术参数

生命周期:Obsolete零件包装代码:SOT
包装说明:SMALL OUTLINE, R-PDSO-G8针数:8
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.81Samacsys Confidence:3
Samacsys Status:ReleasedSamacsys PartID:2865540
Samacsys Pin Count:8Samacsys Part Category:MOSFET (N-Channel)
Samacsys Package Category:Small Outline PackagesSamacsys Footprint Name:so8
Samacsys Released Date:2019-09-16 09:17:17Is Samacsys:N
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:30 V
最大漏极电流 (ID):13 A最大漏源导通电阻:0.0115 Ω
FET 技术:METAL-OXIDE SEMICONDUCTOR最大反馈电容 (Crss):100 pF
JESD-30 代码:R-PDSO-G8元件数量:1
端子数量:8工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:N-CHANNEL
认证状态:Not Qualified表面贴装:YES
端子形式:GULL WING端子位置:DUAL
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

AO4406AL 数据手册

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AO4406AL  
N-Channel Enhancement Mode Field Effect Transistor  
General Description  
Features  
The AO4406AL uses advanced trench technology to  
provide excellent RDS(ON) with low gate charge.  
This device is suitable for high side switch in SMPS and  
general purpose applications.  
VDS (V) = 30V  
ID = 12A  
(VGS = 10V)  
(VGS = 10V)  
(VGS = 4.5V)  
RDS(ON) < 11.5mΩ  
DS(ON) < 15.5mΩ  
R
- RoHS Compliant  
- Halogen Free  
100% UIS Tested!  
100% R g Tested!  
D
SOIC-8  
D
S
S
S
G
D
D
D
D
G
G
S
S
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
Maximum  
Units  
VDS  
Drain-Source Voltage  
30  
V
VGS  
Gate-Source Voltage  
±20  
V
A
TC=25°C  
TC=70°C  
12  
Continuous Drain  
Current  
Pulsed Drain Current C  
Avalanche Current C  
ID  
10  
IDM  
IAR  
100  
22  
A
Repetitive avalanche energy L=0.1mH C  
EAR  
24  
3.1  
mJ  
TC=25°C  
Power Dissipation B  
TC=70°C  
PD  
W
2
TJ, TSTG  
Junction and Storage Temperature Range  
-55 to 150  
°C  
Thermal Characteristics  
Parameter  
Symbol  
Typ  
31  
Max  
40  
Units  
°C/W  
°C/W  
°C/W  
Maximum Junction-to-Ambient A  
t 10s  
RθJA  
Maximum Junction-to-Ambient A D  
Maximum Junction-to-Lead  
59  
75  
Steady-State  
Steady-State  
RθJL  
16  
24  
Alpha & Omega Semiconductor, Ltd.  
www.aosmd.com  

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