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2SK4143-S17-AY PDF预览

2SK4143-S17-AY

更新时间: 2024-11-16 03:56:43
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日电电子 - NEC 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
8页 192K
描述
SWITCHING N-CHANNEL POWER MOS FET

2SK4143-S17-AY 技术参数

是否Rohs认证: 符合生命周期:Transferred
包装说明:LEAD FREE, MP-45F, ISOLATED TO-220, 3 PINReach Compliance Code:compliant
风险等级:5.71雪崩能效等级(Eas):22.5 mJ
外壳连接:ISOLATED配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:60 V最大漏极电流 (ID):20 A
最大漏源导通电阻:0.078 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):50 A
认证状态:Not Qualified表面贴装:NO
端子面层:MATTE TIN端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

2SK4143-S17-AY 数据手册

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DATA SHEET  
MOS FIELD EFFECT TRANSISTOR  
2SK4143  
SWITCHING  
N-CHANNEL POWER MOS FET  
DESCRIPTION  
The 2SK4143 is N-channel MOS Field Effect Transistor designed for high current switching applications.  
FEATURES  
Low on-state resistance  
RDS(on)1 = 44 mΩ MAX. (VGS = 10 V, ID = 10 A)  
RDS(on)2 = 78 mΩ MAX. (VGS = 4.0 V, ID = 10 A)  
Low input capacitance  
Ciss = 820 pF TYP.  
Built-in gate protection diode  
ORDERING INFORMATION  
PART NUMBER  
LEAD PLATING  
Pure Sn (Tin)  
PACKING  
PACKAGE  
2SK4143-S17-AY Note  
Tube 50 p/tube  
Isolated TO-220 typ. 2.2 g  
Note Pb-free (This product does not contain Pb in the external electrode).  
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)  
Drain to Source Voltage (VGS = 0 V)  
Gate to Source Voltage (VDS = 0 V)  
Drain Current (DC) (TC = 25°C)  
Drain Current (pulse) Note1  
VDSS  
VGSS  
ID(DC)  
ID(pulse)  
PT1  
60  
V
V
(Isolated TO-220)  
20  
20  
A
50  
20  
A
Total Power Dissipation (TC = 25°C)  
Total Power Dissipation (TA = 25°C)  
Channel Temperature  
W
W
°C  
°C  
A
PT2  
2.0  
Tch  
150  
Storage Temperature  
Tstg  
55 to +150  
15  
Single Avalanche Current Note2  
Single Avalanche Energy Note2  
IAS  
EAS  
22.5  
mJ  
Notes 1. PW 10 μs, Duty Cycle 1%  
2. Tch 150°C, VDD = 30 V, RG = 25 Ω, VGS = 20 0 V, L = 100 μH  
THERMAL RESISTANCE  
Channel to Case Thermal Resistance  
Channel to Ambient Thermal Resistance  
Rth(ch-C)  
6.25  
62.5  
°C/W  
°C/W  
Rth(ch-A)  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all products and/or types are available in every country. Please check with an NEC Electronics  
sales representative for availability and additional information.  
Document No. D18772EJ1V0DS00 (1st edition)  
Date Published May 2007 NS  
Printed in Japan  
2007  

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