Datasheet > 2SK4147-T2B-AT

2SK4147-T2B-AT

更新时间： 2024-09-28 20:50:23

品牌	Logo	应用领域
日电电子 - NEC		/
页数	文件大小	规格书
6页	151K
描述
Small Signal Field-Effect Transistor, 0.5A I(D), 250V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, MINIMOLD, SC-96, 3 PIN

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2SK4147-T2B-AT 技术参数

是否Rohs认证：	符合	生命周期：	Transferred
包装说明：	LEAD FREE, MINIMOLD, SC-96, 3 PIN	Reach Compliance Code：	compliant
风险等级：	5.72	配置：	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：	250 V	最大漏极电流 (ID)：	0.5 A
最大漏源导通电阻：	6 Ω	FET 技术：	METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：	R-PDSO-G3	JESD-609代码：	e3
元件数量：	1	端子数量：	3
工作模式：	ENHANCEMENT MODE	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	NOT SPECIFIED	极性/信道类型：	N-CHANNEL
认证状态：	Not Qualified	表面贴装：	YES
端子面层：	MATTE TIN	端子形式：	GULL WING
端子位置：	DUAL	处于峰值回流温度下的最长时间：	NOT SPECIFIED
晶体管应用：	SWITCHING	晶体管元件材料：	SILICON
Base Number Matches：	1

2SK4147-T2B-AT 数据手册

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

2SK4147

SWITCHING

N-CHANNEL MOSFET

DESCRIPTION

PACKAGE DRAWING (Unit: mm)

The 2SK4147 is a switching element that is most suitable for use

in DC-DC converter whose DC input voltage is 24 to 48 V.

Having low on-resistance, excelling in the switching characteristics,

and providing the small surface mounting outline, the 2SK4147 is

ideal for use in high-speed switching of the devices on which

space-saving and automation of mounting are promoted.

+0.1

–0.05

0.4

+0.1

–0.06

0.16

0 to 0.1

FEATURES

• Low input capacitance

C^iss= 120 pF TYP.

• Low on-state resistance

R^DS(on)1= 4.5 Ω MAX. (VGS = 10 V, ID = 0.25 A)

R^DS(on)2= 5.2 Ω MAX. (VGS = 4.5 V, ID = 0.25 A)

R^DS(on)3= 6.0 Ω MAX. (VGS = 4 V, ID = 0.25 A)

• 4.5 V drive available

0.65

0.95 0.95

1.9

0.9 to 1.1

1. Gate

2. Source

3. Drain

2.9 ±0.2

• Small and surface mount package (SC-96)

ORDERING INFORMATION

PART NUMBER

2SK4147-T1B-AT ^Note

2SK4147-T2B-AT ^Note

LEAD PLATING

Pure Sn (Tin)

PACKING

PACKAGE

SC-96 (Mini Mold Thin Type)

0.011 g TYP.

Tape 3000 p/reel

Note Pb-free (This product does not contain Pb in the external electrode and other parts.)

Marking: XR

ABSOLUTE MAXIMUM RATINGS (TA = 25°C)

EQUIVALENT CIRCUIT

Drain to Source Voltage (VGS = 0 V)

Gate to Source Voltage (VDS = 0 V)

Drain Current (DC) (T^A= 25°C)

Drain Current (pulse) ^Note1

Total Power Dissipation (T^A= 25°C)

Total Power Dissipation (TA = 25°C) ^Note2

Channel Temperature

VDSS

VGSS

ID(DC)

I^D(pulse)

PT1

P^T2

T^ch

T^stg

250

0.5

2.0

0.2

Drain

Body

Diode

°C

Gate

1.25

150

−55 to +150

Storage Temperature

Gate

Protection

Diode

Source

Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1%

2. Mounted on FR-4 board of 50 mm x 50 mm x 1.6 mm, t ≤ 5 sec

Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.

When this device actually used, an additional protection circuit is externally required if a voltage exceeding

the rated voltage may be applied to this device.

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics

sales representative for availability and additional information.

Document No. D18741EJ1V0DS00 (1st edition)

Date Published April 2007 NS CP(K)

Printed in Japan

2007

12 3 4 5 6

中文翻译

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与2SK4147-T2B-AT相关器件

型号	品牌	获取价格	描述	数据表
2SK415	HITACHI	获取价格	HIGH SPEED POWER SWITCHING
2SK4150	RENESAS	获取价格	Silicon N Channel MOS FET High Speed Power Switching
2SK4150TZ-E	RENESAS	获取价格	Silicon N Channel MOS FET High Speed Power Switching
2SK4151	RENESAS	获取价格	Silicon N Channel MOS FET High Speed Power Switching
2SK4151TZ-E	RENESAS	获取价格	Silicon N Channel MOS FET High Speed Power Switching
2SK416	HITACHI	获取价格	HIGH SPPED POWER SWITCHING Complementary pair with 2SJ120L,2SJ120S
2SK4161D	SANKEN	获取价格	Power Field-Effect Transistor,
2SK4164	SANYO	获取价格	N-Channel Silicon MOSFET General-Purpose Switching Device
2SK416L	HITACHI	获取价格	HIGH SPPED POWER SWITCHING Complementary pair with 2SJ120L,2SJ120S
2SK416S	HITACHI	获取价格	HIGH SPPED POWER SWITCHING Complementary pair with 2SJ120L,2SJ120S

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