是否无铅: | 不含铅 | 生命周期: | Not Recommended |
包装说明: | SMALL OUTLINE, R-PSSO-G2 | 针数: | 2 |
Reach Compliance Code: | not_compliant | ECCN代码: | EAR99 |
Factory Lead Time: | 19 weeks | 风险等级: | 7.13 |
雪崩能效等级(Eas): | 41 mJ | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 1500 V |
最大漏极电流 (Abs) (ID): | 2 A | 最大漏极电流 (ID): | 2 A |
最大漏源导通电阻: | 13 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-263AB | JESD-30 代码: | R-PSSO-G2 |
JESD-609代码: | e3 | 湿度敏感等级: | 1 |
元件数量: | 1 | 端子数量: | 2 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 80 W | 最大脉冲漏极电流 (IDM): | 4 A |
子类别: | FET General Purpose Powers | 表面贴装: | YES |
端子面层: | Tin (Sn) | 端子形式: | GULL WING |
端子位置: | SINGLE | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SK4177-DL-E | SANYO |
获取价格 |
General-Purpose Switching Device Applications |
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2SK4178 | NEC |
获取价格 |
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET |
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2SK4178(1)-S27-AY | NEC |
获取价格 |
Small Signal Field-Effect Transistor, 48A I(D), 30V, 1-Element, N-Channel, Silicon, Metal- |
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2SK4178-S27-AY | NEC |
获取价格 |
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET |
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2SK4178-ZK-E1-AY | NEC |
获取价格 |
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET |
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2SK4178-ZK-E2-AY | NEC |
获取价格 |
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET |
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2SK4179 | SANYO |
获取价格 |
N-Channel Silicon MOSFET General-Purpose Switching Device Applications |
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2SK4179GS | SANYO |
获取价格 |
General-Purpose Switching Device Applications |
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2SK418 | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 2A I(D) | TO-220VAR |
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2SK4181 | SANYO |
获取价格 |
N-Channel Silicon MOSFET General-Purpose Switching Device Applications |
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