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2SK4178-S27-AY PDF预览

2SK4178-S27-AY

更新时间: 2024-10-30 03:56:43
品牌 Logo 应用领域
日电电子 - NEC 晶体开关晶体管场效应晶体管
页数 文件大小 规格书
8页 215K
描述
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

2SK4178-S27-AY 数据手册

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DATA SHEET  
MOS FIELD EFFECT TRANSISTOR  
2SK4178  
SWITCHING  
N-CHANNEL POWER MOS FET  
DESCRIPTION  
The 2SK4178 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics,  
and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier.  
FEATURES  
Low on-state resistance  
RDS(on)1 = 9.0 mΩ MAX. (VGS = 10 V, ID = 30 A)  
Low gate to drain charge  
QGD = 3.7 nC TYP. (VDD = 15 V, ID = 30 A)  
4.5 V drive available  
ORDERING INFORMATION  
PART NUMBER  
2SK4178(1)-S27-AY Note  
2SK4178-ZK-E1-AY Note  
2SK4178-ZK-E2-AY Note  
LEAD PLATING  
PACKING  
PACKAGE  
Tube 75 p/tube  
TO-251 (MP-3-b) typ. 0.34 g  
Pure Sn (Tin)  
Tape 2500 p/reel  
TO-252 (MP-3ZK) typ. 0.27 g  
Note Pb-free (This product does not contain Pb in external electrode).  
(TO-251)  
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)  
Drain to Source Voltage (VGS = 0 V)  
Gate to Source Voltage (VDS = 0 V)  
Drain Current (DC) (TC = 25°C)  
Drain Current (pulse) Note1  
VDSS  
VGSS  
ID(DC)  
ID(pulse)  
PT1  
30  
20  
V
V
48  
A
144  
A
Total Power Dissipation (TC = 25°C)  
Total Power Dissipation (TA = 25°C)  
Channel Temperature  
33  
W
W
°C  
°C  
A
PT2  
1.0  
(TO-252)  
Tch  
150  
Storage Temperature  
Tstg  
55 to +150  
23  
Single Avalanche Current Note2  
Single Avalanche Energy Note2  
IAS  
EAS  
52.9  
mJ  
Notes 1. PW 10 μs, Duty Cycle 1%  
2. Starting Tch = 25°C, VDD = 15 V, RG = 25 Ω, VGS = 20 0 V, L = 0.1 mH  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all products and/or types are available in every country. Please check with an NEC Electronics  
sales representative for availability and additional information.  
Document No. D19080EJ1V0DS00 (1st edition)  
Date Published December 2007 NS  
Printed in Japan  
2007  

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