2SK4198FS
Ordering number : ENA1370C
SANYO Sem iconductors
DATA S HEET
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
2SK4198FS
Features
•
•
ON-resistance R (on)=1.8 (typ.)
Input capacitance Ciss=360pF (typ.)
Repetitive avalanche guarantee
Ω
DS
•
•
10V drive
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Symbol
Conditions
Ratings
Unit
V
V
600
±30
5
DSS
V
V
GSS
*1
I
Limited only by maximum temperature Tch=150 C
A
°
Dc
Drain Current (DC)
I
*2
Tc=25 C (SANYO s ideal heat dissipation condition)*3
4
A
°
’
Dpack
Drain Current (Pulse)
Allowable Power Dissipation
I
PW 10 s, duty cycle 1%
18
A
≤
μ
≤
DP
2.0
30
W
W
P
D
Tc=25 C (SANYO s ideal heat dissipation condition)*3
°
’
Channel Temperature
Tch
150
C
C
°
°
Storage Temperature
Tstg
--55 to +150
Avalanche Energy (Single Pulse) *4
Avalanche Current *5
E
55
4.5
3
mJ
A
AS
I
AV
Avalanche Energy (Repetition)
E
Limited only by maximum temperature Tch=150 C
mJ
°
AR
Note : 1 Shows chip capability.
*
2 Package limited.
*
3 SANYO’s condition is radiation from backside.
*
The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminium.
4 V =50V, L=5mH, I =4.5A (Fig.1)
*
DD
AV
5 L 5mH, Single pulse
*
≤
Product & Package Information
Package Dimensions
unit : mm (typ)
• Package
: TO-220F-3FS
7528-001
• JEITA, JEDEC
: SC-67
• Minimum Packing Quantity : 50 pcs./magazine
4.7
10.16
3.18
2SK4198FS
2.54
Marking
Electrical Connection
2
K4198
1
LOT No.
2.76
1.47 MAX
0.8
3
1
2
3
0.5
1 : Gate
2 : Drain
3 : Source
2.54
2.54
SANYO : TO-220F-3FS
http://www.sanyosemi.com/en/network/
O1712 TKIM TC-00002825/70710 TKIM TC-00002401/31010 TKIM TC-00002278/N2608QB MSIM TC-00001732 No. A1370-1/7