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2SK4209

更新时间： 2024-02-07 14:15:14
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三洋 - SANYO 开关通用开关
页数 文件大小 规格书
5页 287K
描述
N-Channel Silicon MOSFET General-Purpose Switching Device Applications

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2SK4209 技术参数

生命周期：Transferred零件包装代码：TO-3PB
包装说明：FLANGE MOUNT, R-PSFM-T3针数：3
Reach Compliance Code：unknownHTS代码：8541.29.00.95
风险等级：5.38Is Samacsys：N
雪崩能效等级（Eas）：410 mJ配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：800 V最大漏极电流 (Abs) (ID)：12 A
最大漏极电流 (ID)：12 A最大漏源导通电阻：1.08 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJESD-30 代码：R-PSFM-T3
元件数量：1端子数量：3
工作模式：ENHANCEMENT MODE最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：FLANGE MOUNT极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：190 W最大脉冲漏极电流 (IDM)：24 A
认证状态：Not Qualified子类别：FET General Purpose Power
表面贴装：NO端子形式：THROUGH-HOLE
端子位置：SINGLE晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

2SK4209 数据手册

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Ordering number : ENA1516  
SANYO Sem iconductors  
DATA S HEET  
N-Channel Silicon MOSFET  
General-Purpose Switching Device  
Applications  
2SK4209  
Features  
•
Low ON-resistance, ultrahigh-speed switching.  
Adoption of high reliability HVP process.  
Avalanche resistance guarantee.  
•
•
Specifications  
at Ta=25°C  
Absolute Maximum Ratings  
Parameter  
Drain-to-Source Voltage  
Gate-to-Source Voltage  
Drain Current (DC)  
Symbol  
Conditions  
Ratings  
Unit  
V
V
800  
±30  
12  
DSS  
V
V
GSS  
I
A
D
Drain Current (Pulse)  
I
DP  
PW 10 s, duty cycle 1%  
24  
A
≤
μ
≤
2.5  
190  
150  
W
W
Allowable Power Dissipation  
P
D
Tc=25 C  
°
Channel Temperature  
Tch  
C
C
°
Storage Temperature  
Tstg  
--55 to +150  
°
Avalanche Energy (Single Pulse) *1  
Avalanche Current *2  
E
410  
12  
mJ  
A
AS  
I
AV  
Note : 1 V =99V, L=5mH, I =12A  
*
DD  
2 L 5mH, Single pulse  
AV  
*
≤
at Ta=25°C  
Electrical Characteristics  
Ratings  
typ  
Parameter  
Symbol  
Conditions  
Unit  
min  
800  
max  
Drain-to-Source Breakdown Voltage  
Zero-Gate Voltage Drain Current  
Gate-to-Source Leakage Current  
Cutoff Voltage  
V
I
=10mA, V =0V  
D GS  
V
mA  
nA  
V
(BR)DSS  
I
I
V
V
V
=640V, V =0V  
GS  
1.0  
±100  
4.0  
DSS  
DS  
GS  
DS  
=±30V, V =0V  
DS  
GSS  
V
(off)  
GS  
=10V, I =1mA  
2.0  
D
Marking : K4209  
Continued on next page.  
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to  
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,  
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not  
be intended for use for any "special application" (medical equipment whose purpose is to sustain life,  
aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal  
system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten  
human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they  
grant any guarantee thereof. If you should intend to use our products for applications outside the standard  
applications of our customer who is considering such use and/or outside the scope of our intended standard  
applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the  
intended use, our customer shall be solely responsible for the use.  
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate  
the performance, characteristics, and functions of the described products in the independent state, and are  
not guarantees of the performance, characteristics, and functions of the described products as mounted in the  
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an  
independent device, the customer should always evaluate and test devices mounted in the customer's  
products or equipment.  
www.semiconductor-sanyo.com/network  
No. A1516-1/5  
O2809QB TK IM TC-00002109  
12345

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