Datasheet > 2SK4161D

2SK4161D

更新时间： 2024-11-16 21:18:43

品牌	Logo	应用领域
三垦 - SANKEN		/
页数	文件大小	规格书
7页	370K
描述
Power Field-Effect Transistor,

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中文翻译

获取价格

技术参数
数据手册

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2SK4161D 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.76	峰值回流温度（摄氏度）：	NOT SPECIFIED
处于峰值回流温度下的最长时间：	NOT SPECIFIED	Base Number Matches：	1

2SK4161D 数据手册

http://www.sanken-ele.co.jp

SANKEN ELECTRIC

２ＳＫ４１６１Ｄ

Mar. 2014

Features

Package

・Low on-resistance

・Built-in gate protection diode

TO-3P

Applications

・Electric power steering

・High current switching

Key Specifications

・V_(BR)DSS= 60V (I_D=100μA)

・R_DS(ON)= 4.8mΩ max. (V_GS=10V, I_D=35A)

・R_DS(ON)= 6.0mΩ max. (V_GS=8V, I_D=35A)

Internal Equivalent Circuit

Absolute maximum ratings

(Ta=25°C)

Unit

Characteristic

Symbol

Rating

Drain to Source Voltage

Gate to Source Voltage

Continuous Drain Current

Pulsed Drain Current

V_DSS

±20

±100

V_GSS

I_D

※

I_D(pulse)

P_D

±200

Maximum Power Dissipation

Single Pulse Avalanche Energy

Channel Temperature

132 (Tc=25°C)

400

°C

※

E_AS

T_ch

175

Storage Temperature

T_stg

-55 to +175

※1 PW≦100μsec. duty cycle≦1%

※2 V_DD=20V, L=1mH, I_L=20A, unclamped, See Fig.1

The information included herein is believed to be accurate and reliable. However, SANKEN ELECTRIC CO., LTD assumes no

responsibility for its use ; nor for any infringements of patents or other rights of third parties that may result from its use.

Copy Right: SANKEN ELECTRIC CO.,LTD.

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中文翻译

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