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2SK4161D PDF预览

2SK4161D

更新时间: 2024-11-16 21:18:43
品牌 Logo 应用领域
三垦 - SANKEN /
页数 文件大小 规格书
7页 370K
描述
Power Field-Effect Transistor,

2SK4161D 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:,Reach Compliance Code:unknown
风险等级:5.76峰值回流温度(摄氏度):NOT SPECIFIED
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

2SK4161D 数据手册

 浏览型号2SK4161D的Datasheet PDF文件第2页浏览型号2SK4161D的Datasheet PDF文件第3页浏览型号2SK4161D的Datasheet PDF文件第4页浏览型号2SK4161D的Datasheet PDF文件第5页浏览型号2SK4161D的Datasheet PDF文件第6页浏览型号2SK4161D的Datasheet PDF文件第7页 
http://www.sanken-ele.co.jp  
SANKEN ELECTRIC  
2SK4161D  
Mar. 2014  
Features  
Package  
Low on-resistance  
Built-in gate protection diode  
TO-3P  
Applications  
Electric power steering  
High current switching  
Key Specifications  
V(BR)DSS = 60V (ID=100μA)  
RDS(ON) = 4.8mΩ max. (VGS=10V, ID=35A)  
RDS(ON) = 6.0mΩ max. (VGS=8V, ID=35A)  
Internal Equivalent Circuit  
2
1
3
Absolute maximum ratings  
(Ta=25°C)  
Unit  
Characteristic  
Symbol  
Rating  
V
V
Drain to Source Voltage  
Gate to Source Voltage  
Continuous Drain Current  
Pulsed Drain Current  
VDSS  
60  
±20  
±100  
VGSS  
ID  
A
1
ID(pulse)  
PD  
±200  
A
Maximum Power Dissipation  
Single Pulse Avalanche Energy  
Channel Temperature  
132 (Tc=25°C)  
400  
W
mJ  
°C  
°C  
2
EAS  
Tch  
175  
Storage Temperature  
Tstg  
-55 to +175  
1 PW100μsec. duty cycle1%  
2 VDD=20V, L=1mH, IL=20A, unclamped, See Fig.1  
The information included herein is believed to be accurate and reliable. However, SANKEN ELECTRIC CO., LTD assumes no  
responsibility for its use ; nor for any infringements of patents or other rights of third parties that may result from its use.  
Copy Right: SANKEN ELECTRIC CO.,LTD.  
Page 1  

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