Datasheet > 2SK4177

2SK4177

更新时间： 2024-09-29 07:32:39

品牌	Logo	应用领域
三洋 - SANYO		开关通用开关
页数	文件大小	规格书
5页	58K
描述
N-Channel Silicon MOSFET General-Purpose Switching Device Applications

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中文翻译

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2SK4177 数据手册

Ordering number : ENA0869

2SK4177

SANYO Sem iconductors

DATA S HEET

N-Channel Silicon MOSFET

General-Purpose Switching Device

Applications

2SK4177

Features

• Low ON-resistance, low input capacitance, ultrahigh-speed switching.

•

Adoption of high reliability HVP process.

•

Avalanche resistance guarantee.

Specifications

Absolute Maximum Ratings at Ta=25°C

Parameter

Drain-to-Source Voltage

Symbol

Conditions

Ratings

Unit

1500

±20

DSS

GSS

Gate-to-Source Voltage

Drain Current (DC)

Drain Current (Pulse)

PW≤10μs, duty cycle≤1%

1.65

°C

Allowable Power Dissipation

Tc=25°C

Channel Temperature

Tch

150

Storage Temperature

Tstg

--55 to +150

Avalanche Energy (Single Pulse) *1

Avalanche Current *2

*1 V =99V, L=20mH, I =2A

*2 L≤20mH, single pulse

Marking : K4177

Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to

"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,

communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be

intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace

instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety

equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case

of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee

thereof. If you should intend to use our products for applications outside the standard applications of our

customer who is considering such use and/or outside the scope of our intended standard applications, please

consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our

customer shall be solely responsible for the use.

Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate

the performance, characteristics, and functions of the described products in the independent state, and are not

guarantees of the performance, characteristics, and functions of the described products as mounted in the

customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent

device, the customer should always evaluate and test devices mounted in the customer

equipment.

's products or

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

31208QB TI IM TC-00001270 No. A0869-1/5

12 3 4 5

中文翻译

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与2SK4177相关器件

型号	品牌	获取价格	描述	数据表
2SK4177_12	SANYO	获取价格	General-Purpose Switching Device Applications
2SK4177-DL-1E	ONSEMI	获取价格	N 沟道功率 MOSFET，1500V，2A，13Ω，TO-263-2L
2SK4177-DL-E	SANYO	获取价格	General-Purpose Switching Device Applications
2SK4178	NEC	获取价格	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET
2SK4178(1)-S27-AY	NEC	获取价格	Small Signal Field-Effect Transistor, 48A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-
2SK4178-S27-AY	NEC	获取价格	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET
2SK4178-ZK-E1-AY	NEC	获取价格	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET
2SK4178-ZK-E2-AY	NEC	获取价格	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET
2SK4179	SANYO	获取价格	N-Channel Silicon MOSFET General-Purpose Switching Device Applications
2SK4179GS	SANYO	获取价格	General-Purpose Switching Device Applications

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