2SK4150

更新时间： 2024-11-16 11:49:03

品牌	Logo	应用领域
瑞萨 - RENESAS		开关电源开关
页数	文件大小	规格书
7页	82K
描述
Silicon N Channel MOS FET High Speed Power Switching

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

2SK4150 数据手册

Preliminary Datasheet

2SK4150

Silicon N Channel MOS FET

High Speed Power Switching

REJ03G1909-0300

Rev.3.00

May 27, 2010

Features



Capable of 2.5 V gate drive

Low drive current

Low on-resistance

R_DS(on)= 4.0  typ. (at I_D= 0.2 A, V_GS= 4 V, Ta = 25°C)

Outline

RENESAS Package code: PRSS0003DA-A

(Package name: TO-92(1))

1. Source

2. Drain

3. Gate

Absolute Maximum Ratings

(Ta = 25°C)

Item

Drain to source voltage

Symbol

V_DSS

V_GSS

I_D

Ratings

250

Unit

Gate to source voltage

±10

Drain current

0.4

Note1

Drain peak current

I_{D (pulse)}

I_DR

1.6

Body-drain diode reverse drain current

Body-drain diode reverse drain peak current

Channel dissipation

0.4

Note1

I_{DR (pulse)}

Pch

1.6

0.75

Channel to ambient thermal impedance

Channel temperature

_ch-a

166.7

150

C/W

C

Tch

Storage temperature

Tstg

–55 to +150

Notes: 1. PW  10 s, duty cycle  1%

REJ03G1909-0300 Rev.3.00

May 27, 2010

Page 1 of 6

12 3 4 5 6 7

中文翻译

下载PDF

与2SK4150相关器件

型号	品牌	获取价格	描述	数据表
2SK4150TZ-E	RENESAS	获取价格	Silicon N Channel MOS FET High Speed Power Switching
2SK4151	RENESAS	获取价格	Silicon N Channel MOS FET High Speed Power Switching
2SK4151TZ-E	RENESAS	获取价格	Silicon N Channel MOS FET High Speed Power Switching
2SK416	HITACHI	获取价格	HIGH SPPED POWER SWITCHING Complementary pair with 2SJ120L,2SJ120S
2SK4161D	SANKEN	获取价格	Power Field-Effect Transistor,
2SK4164	SANYO	获取价格	N-Channel Silicon MOSFET General-Purpose Switching Device
2SK416L	HITACHI	获取价格	HIGH SPPED POWER SWITCHING Complementary pair with 2SJ120L,2SJ120S
2SK416S	HITACHI	获取价格	HIGH SPPED POWER SWITCHING Complementary pair with 2SJ120L,2SJ120S
2SK417	TOSHIBA	获取价格	2SK417
2SK4171	SANYO	获取价格	N-Channel Silicon MOSFET General-Purpose Switching Device Applications