生命周期: | Obsolete | 包装说明: | SMALL OUTLINE, R-PSSO-F2 |
针数: | 2 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | 风险等级: | 5.84 |
Is Samacsys: | N | 雪崩能效等级(Eas): | 850 mJ |
外壳连接: | DRAIN | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 45 V | 最大漏极电流 (Abs) (ID): | 100 A |
最大漏极电流 (ID): | 100 A | 最大漏源导通电阻: | 0.005 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PSSO-F2 |
元件数量: | 1 | 端子数量: | 2 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 50 W | 最大脉冲漏极电流 (IDM): | 400 A |
认证状态: | Not Qualified | 子类别: | FET General Purpose Power |
表面贴装: | YES | 端子形式: | FLAT |
端子位置: | SINGLE | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SK416L | HITACHI |
获取价格 |
HIGH SPPED POWER SWITCHING Complementary pair with 2SJ120L,2SJ120S | |
2SK416S | HITACHI |
获取价格 |
HIGH SPPED POWER SWITCHING Complementary pair with 2SJ120L,2SJ120S | |
2SK417 | TOSHIBA |
获取价格 |
2SK417 | |
2SK4171 | SANYO |
获取价格 |
N-Channel Silicon MOSFET General-Purpose Switching Device Applications | |
2SK4171 | ONSEMI |
获取价格 |
Power MOSFET 60 V, 100 A, 7.2 mOhm Single N-Channel | |
2SK4174 | PANASONIC |
获取价格 |
Power Field-Effect Transistor, 28A I(D), 0.052ohm, 1-Element, N-Channel, Silicon, Metal-ox | |
2SK4177 | SANYO |
获取价格 |
N-Channel Silicon MOSFET General-Purpose Switching Device Applications | |
2SK4177_12 | SANYO |
获取价格 |
General-Purpose Switching Device Applications | |
2SK4177-DL-1E | ONSEMI |
获取价格 |
N 沟道功率 MOSFET,1500V,2A,13Ω,TO-263-2L | |
2SK4177-DL-E | SANYO |
获取价格 |
General-Purpose Switching Device Applications |