是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Obsolete | 零件包装代码: | TO-92(1) |
包装说明: | CYLINDRICAL, O-PBCY-T3 | 针数: | 3 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8541.21.00.95 | 风险等级: | 5.81 |
Is Samacsys: | N | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 250 V | 最大漏极电流 (Abs) (ID): | 0.4 A |
最大漏极电流 (ID): | 0.4 A | 最大漏源导通电阻: | 5.9 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-92 |
JESD-30 代码: | O-PBCY-T3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | ROUND | 封装形式: | CYLINDRICAL |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 0.75 W | 认证状态: | Not Qualified |
子类别: | FET General Purpose Power | 表面贴装: | NO |
端子形式: | THROUGH-HOLE | 端子位置: | BOTTOM |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SK4151 | RENESAS |
获取价格 |
Silicon N Channel MOS FET High Speed Power Switching | |
2SK4151TZ-E | RENESAS |
获取价格 |
Silicon N Channel MOS FET High Speed Power Switching | |
2SK416 | HITACHI |
获取价格 |
HIGH SPPED POWER SWITCHING Complementary pair with 2SJ120L,2SJ120S | |
2SK4161D | SANKEN |
获取价格 |
Power Field-Effect Transistor, | |
2SK4164 | SANYO |
获取价格 |
N-Channel Silicon MOSFET General-Purpose Switching Device | |
2SK416L | HITACHI |
获取价格 |
HIGH SPPED POWER SWITCHING Complementary pair with 2SJ120L,2SJ120S | |
2SK416S | HITACHI |
获取价格 |
HIGH SPPED POWER SWITCHING Complementary pair with 2SJ120L,2SJ120S | |
2SK417 | TOSHIBA |
获取价格 |
2SK417 | |
2SK4171 | SANYO |
获取价格 |
N-Channel Silicon MOSFET General-Purpose Switching Device Applications | |
2SK4171 | ONSEMI |
获取价格 |
Power MOSFET 60 V, 100 A, 7.2 mOhm Single N-Channel |