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2SK4144-S12-AZ

更新时间： 2024-11-16 15:32:07
品牌 Logo 应用领域
日电电子 - NEC 局域网ISM频段开关脉冲晶体管
页数 文件大小 规格书
8页 215K
描述
Power Field-Effect Transistor, 70A I(D), 60V, 0.0073ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, TO-220, 3 PIN

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2SK4144-S12-AZ 技术参数

是否Rohs认证： 符合生命周期：Transferred
零件包装代码：TO-220AB包装说明：FLANGE MOUNT, R-PSFM-T3
针数：3Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8541.29.00.95
风险等级：5.32外壳连接：ISOLATED
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：60 V
最大漏极电流 (ID)：70 A最大漏源导通电阻：0.0073 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJEDEC-95代码：TO-220AB
JESD-30 代码：R-PSFM-T3JESD-609代码：e6
元件数量：1端子数量：3
工作模式：ENHANCEMENT MODE封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：FLANGE MOUNT
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：N-CHANNEL
最大脉冲漏极电流 (IDM)：280 A认证状态：Not Qualified
表面贴装：NO端子面层：TIN BISMUTH
端子形式：THROUGH-HOLE端子位置：SINGLE
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

2SK4144-S12-AZ 数据手册

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DATA SHEET  
MOS FIELD EFFECT TRANSISTOR  
2SK4144  
SWITCHING  
N-CHANNEL POWER MOS FET  
DESCRIPTION  
The 2SK4144 is N-channel MOS Field Effect Transistor designed for high current switching applications.  
ORDERING INFORMATION  
PART NUMBER  
LEAD PLATING  
Sn-Ag-Cu  
PACKING  
Vinyl bag 200 p/bag  
Tube 50 p/tube  
PACKAGE  
Note  
2SK4144-AZ  
Isolated TO-220 typ. 2.2 g  
Note  
2SK4144-S12-AZ  
Note Pb-free (This product does not contain Pb in the external electrode.)  
FEATURES  
• Low on-state resistance  
RDS(on)1 = 5.8 mΩ MAX. (VGS = 10 V, ID = 35 A)  
RDS(on)2 = 7.3 mΩ MAX. (VGS = 4.5 V, ID = 35 A)  
• Low input capacitance  
Ciss = 5500 pF TYP. (VDS = 10 V)  
• Built-in gate protection diode  
<R>  
(Isolated TO-220)  
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)  
Drain to Source Voltage (VGS = 0 V)  
Gate to Source Voltage (VDS = 0 V)  
Drain Current (DC) (TC = 25°C)  
Drain Current (pulse) Note1  
VDSS  
VGSS  
ID(DC)  
ID(pulse)  
PT1  
60  
20  
V
V
70  
A
280  
A
Total Power Dissipation (TC = 25°C)  
Total Power Dissipation (TA = 25°C)  
Channel Temperature  
35  
W
W
°C  
°C  
A
PT2  
2.0  
Tch  
150  
Storage Temperature  
Tstg  
−55 to +150  
49.5  
245  
Repetitive Avalanche Current Note2  
Repetitive Avalanche Energy Note2  
IAR  
EAR  
mJ  
Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1%  
2. Tch ≤ 150°C, VDD = 30 V, RG = 25 Ω, VGS = 20 → 0 V, L = 100 μH  
THERMAL RESISTANCE  
Channel to Case Thermal Resistance  
Channel to Ambient Thermal Resistance  
Rth(ch-C)  
3.57  
62.5  
°C/W  
°C/W  
Rth(ch-A)  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all products and/or types are available in every country. Please check with an NEC Electronics  
sales representative for availability and additional information.  
Document No. D19413EJ2V0DS00 (2nd edition)  
Date Published October 2008 NS  
Printed in Japan  
2008  
The mark <R> shows major revised points.  
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.  
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