Datasheet > 2SK4146

2SK4146

更新时间： 2024-09-28 07:17:07

品牌	Logo	应用领域
瑞萨 - RENESAS		/
页数	文件大小	规格书
8页	220K
描述
MOS FIELD EFFECT TRANSISTOR

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数据手册

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2SK4146 数据手册

Preliminary Data Sheet

R07DS0130EJ0100

Rev.1.00

2SK4146

MOS FIELD EFFECT TRANSISTOR

Sep 24, 2010

Description

The 2SK4146 is N-channel MOS Field Effect Transistor designed for high current switching applications.

Features

•

Low on-state resistance

⎯ R_DS(on)= 10.1 mΩ MAX. (V_GS= 10 V, I_D= 40 A)

Low input capacitance

•

⎯ Ciss = 3500 pF TYP. (V_DS= 10 V)

Ordering Information

Part No.

2SK4146-S19-AY ^∗

LEAD PLATING

PACKING

50 pcs/tube

Package

Pure Sn (Tin)

TO-220, S19 tube

Note: ^∗1. Pb-free (This product does not contain Pb in the external electrode.)

Absolute Maximum Ratings (T_A= 25°C)

Item

Symbol

V_DSS

Ratings

Unit

Drain to Source Voltage (V_GS= 0 V)

Gate to Source Voltage (V_DS= 0 V)

Drain Current (DC) (T_C= 25°C)

V_GSS

I_D(DC)

I_D(pulse)

P_T1

Drain Current (pulse) ^∗

200

Total Power Dissipation (T_C= 25°C)

Total Power Dissipation (T_A= 25°C)

Channel Temperature

°C

P_T2

1.5

T_ch

150

Storage Temperature

Repetitive Avalanche Current ^∗

Repetitive Avalanche Energy ^∗

T_stg

−55 to +150

I_AR

E_AR

109

Notes: ^∗1. PW ≤ 10 μs, Duty Cycle ≤ 1%

^∗2. Starting T_ch= 25°C, V_DD= 38 V, R_G= 25 Ω, V_GS= 20 → 0 V, L = 100 μH

Thermal Resistance

Channel to Case Thermal Resistance

R_th(ch-C)

R_th(ch-A)

1.49

83.3

°C/W

Channel to Ambient Thermal Resistance

R07DS0130EJ0100 Rev.1.00

Sep 24, 2010

Page 1 of 6

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