是否Rohs认证: | 符合 | 生命周期: | Obsolete |
零件包装代码: | TO-220AB | 包装说明: | LEAD FREE, TO-220, 3 PIN |
针数: | 3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8541.29.00.95 |
Factory Lead Time: | 1 week | 风险等级: | 5.81 |
Is Samacsys: | N | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 75 V |
最大漏极电流 (Abs) (ID): | 80 A | 最大漏极电流 (ID): | 80 A |
最大漏源导通电阻: | 0.0101 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-220AB | JESD-30 代码: | R-PSFM-T3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 84 W |
最大脉冲漏极电流 (IDM): | 200 A | 认证状态: | Not Qualified |
子类别: | FET General Purpose Power | 表面贴装: | NO |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SK4147 | RENESAS |
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Old Company Name in Catalogs and Other Documents | |
2SK4147-T1B-AT | NEC |
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Small Signal Field-Effect Transistor, 0.5A I(D), 250V, 1-Element, N-Channel, Silicon, Meta | |
2SK4147-T2B-AT | RENESAS |
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500mA, 250V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, LEAD FREE, MINIMOLD, SC-96, 3 PIN | |
2SK4147-T2B-AT | NEC |
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Small Signal Field-Effect Transistor, 0.5A I(D), 250V, 1-Element, N-Channel, Silicon, Meta | |
2SK415 | HITACHI |
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HIGH SPEED POWER SWITCHING | |
2SK4150 | RENESAS |
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Silicon N Channel MOS FET High Speed Power Switching | |
2SK4150TZ-E | RENESAS |
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Silicon N Channel MOS FET High Speed Power Switching | |
2SK4151 | RENESAS |
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Silicon N Channel MOS FET High Speed Power Switching | |
2SK4151TZ-E | RENESAS |
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Silicon N Channel MOS FET High Speed Power Switching | |
2SK416 | HITACHI |
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HIGH SPPED POWER SWITCHING Complementary pair with 2SJ120L,2SJ120S |