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2SK4146-S19-AY PDF预览

2SK4146-S19-AY

更新时间: 2024-11-16 07:17:07
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瑞萨 - RENESAS 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
8页 220K
描述
MOS FIELD EFFECT TRANSISTOR

2SK4146-S19-AY 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TO-220AB包装说明:LEAD FREE, TO-220, 3 PIN
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.29.00.95
Factory Lead Time:1 week风险等级:5.81
Is Samacsys:N外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:75 V
最大漏极电流 (Abs) (ID):80 A最大漏极电流 (ID):80 A
最大漏源导通电阻:0.0101 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):84 W
最大脉冲漏极电流 (IDM):200 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

2SK4146-S19-AY 数据手册

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Preliminary Data Sheet  
R07DS0130EJ0100  
Rev.1.00  
2SK4146  
MOS FIELD EFFECT TRANSISTOR  
Sep 24, 2010  
Description  
The 2SK4146 is N-channel MOS Field Effect Transistor designed for high current switching applications.  
Features  
Low on-state resistance  
RDS(on) = 10.1 mΩ MAX. (VGS = 10 V, ID = 40 A)  
Low input capacitance  
Ciss = 3500 pF TYP. (VDS = 10 V)  
Ordering Information  
Part No.  
2SK4146-S19-AY ∗  
LEAD PLATING  
PACKING  
50 pcs/tube  
Package  
1
Pure Sn (Tin)  
TO-220, S19 tube  
Note: 1. Pb-free (This product does not contain Pb in the external electrode.)  
Absolute Maximum Ratings (TA = 25°C)  
Item  
Symbol  
VDSS  
Ratings  
Unit  
V
Drain to Source Voltage (VGS = 0 V)  
Gate to Source Voltage (VDS = 0 V)  
Drain Current (DC) (TC = 25°C)  
75  
VGSS  
ID(DC)  
ID(pulse)  
PT1  
20  
80  
V
A
1
Drain Current (pulse) ∗  
200  
A
Total Power Dissipation (TC = 25°C)  
Total Power Dissipation (TA = 25°C)  
Channel Temperature  
84  
W
W
°C  
°C  
A
PT2  
1.5  
Tch  
150  
Storage Temperature  
Repetitive Avalanche Current ∗  
Repetitive Avalanche Energy ∗  
Tstg  
55 to +150  
33  
2
IAR  
2
EAR  
109  
mJ  
Notes: 1. PW 10 μs, Duty Cycle 1%  
2. Starting Tch = 25°C, VDD = 38 V, RG = 25 Ω, VGS = 20 0 V, L = 100 μH  
Thermal Resistance  
Channel to Case Thermal Resistance  
Rth(ch-C)  
Rth(ch-A)  
1.49  
83.3  
°C/W  
°C/W  
Channel to Ambient Thermal Resistance  
R07DS0130EJ0100 Rev.1.00  
Sep 24, 2010  
Page 1 of 6  

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