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2SK4147-T1B-AT

更新时间： 2024-11-16 20:50:23
品牌 Logo 应用领域
日电电子 - NEC 光电二极管
页数 文件大小 规格书
6页 151K
描述
Small Signal Field-Effect Transistor, 0.5A I(D), 250V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, MINIMOLD, SC-96, 3 PIN

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2SK4147-T1B-AT 技术参数

是否Rohs认证： 符合生命周期：Transferred
零件包装代码：SC-96包装说明：SMALL OUTLINE, R-PDSO-G3
针数：3Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8541.21.00.95
风险等级：5.34配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：250 V最大漏极电流 (ID)：0.5 A
最大漏源导通电阻：6 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：R-PDSO-G3JESD-609代码：e3
元件数量：1端子数量：3
工作模式：ENHANCEMENT MODE封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：N-CHANNEL
认证状态：Not Qualified表面贴装：YES
端子面层：MATTE TIN端子形式：GULL WING
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

2SK4147-T1B-AT 数据手册

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DATA SHEET  
MOS FIELD EFFECT TRANSISTOR  
2SK4147  
SWITCHING  
N-CHANNEL MOSFET  
DESCRIPTION  
PACKAGE DRAWING (Unit: mm)  
The 2SK4147 is a switching element that is most suitable for use  
in DC-DC converter whose DC input voltage is 24 to 48 V.  
Having low on-resistance, excelling in the switching characteristics,  
and providing the small surface mounting outline, the 2SK4147 is  
ideal for use in high-speed switching of the devices on which  
space-saving and automation of mounting are promoted.  
+0.1  
–0.05  
0.4  
+0.1  
–0.06  
0.16  
3
0 to 0.1  
FEATURES  
1
2
• Low input capacitance  
Ciss = 120 pF TYP.  
• Low on-state resistance  
RDS(on)1 = 4.5 Ω MAX. (VGS = 10 V, ID = 0.25 A)  
RDS(on)2 = 5.2 Ω MAX. (VGS = 4.5 V, ID = 0.25 A)  
RDS(on)3 = 6.0 Ω MAX. (VGS = 4 V, ID = 0.25 A)  
• 4.5 V drive available  
0.65  
0.95 0.95  
1.9  
0.9 to 1.1  
1. Gate  
2. Source  
3. Drain  
2.9 ±0.2  
• Small and surface mount package (SC-96)  
ORDERING INFORMATION  
PART NUMBER  
2SK4147-T1B-AT Note  
2SK4147-T2B-AT Note  
LEAD PLATING  
Pure Sn (Tin)  
PACKING  
PACKAGE  
SC-96 (Mini Mold Thin Type)  
0.011 g TYP.  
Tape 3000 p/reel  
Note Pb-free (This product does not contain Pb in the external electrode and other parts.)  
Marking: XR  
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)  
EQUIVALENT CIRCUIT  
Drain to Source Voltage (VGS = 0 V)  
Gate to Source Voltage (VDS = 0 V)  
Drain Current (DC) (TA = 25°C)  
Drain Current (pulse) Note1  
Total Power Dissipation (TA = 25°C)  
Total Power Dissipation (TA = 25°C) Note2  
Channel Temperature  
VDSS  
VGSS  
ID(DC)  
ID(pulse)  
PT1  
PT2  
Tch  
Tstg  
250  
20  
0.5  
2.0  
0.2  
V
V
A
Drain  
A
Body  
Diode  
W
W
°C  
°C  
Gate  
1.25  
150  
−55 to +150  
Storage Temperature  
Gate  
Protection  
Diode  
Source  
Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1%  
2. Mounted on FR-4 board of 50 mm x 50 mm x 1.6 mm, t ≤ 5 sec  
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.  
When this device actually used, an additional protection circuit is externally required if a voltage exceeding  
the rated voltage may be applied to this device.  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all products and/or types are available in every country. Please check with an NEC Electronics  
sales representative for availability and additional information.  
Document No. D18741EJ1V0DS00 (1st edition)  
Date Published April 2007 NS CP(K)  
Printed in Japan  
2007  
123456

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