5秒后页面跳转
2SK4145-S19-AY PDF预览

2SK4145-S19-AY

更新时间: 2024-11-16 21:17:51
品牌 Logo 应用领域
日电电子 - NEC 局域网开关脉冲晶体管
页数 文件大小 规格书
8页 193K
描述
Power Field-Effect Transistor, 84A I(D), 60V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, TO-220, 3 PIN

2SK4145-S19-AY 技术参数

是否Rohs认证: 符合生命周期:Transferred
包装说明:LEAD FREE, TO-220, 3 PINReach Compliance Code:compliant
风险等级:5.71雪崩能效等级(Eas):102 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:60 V最大漏极电流 (ID):84 A
最大漏源导通电阻:0.01 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):215 A
认证状态:Not Qualified表面贴装:NO
端子面层:MATTE TIN端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

2SK4145-S19-AY 数据手册

 浏览型号2SK4145-S19-AY的Datasheet PDF文件第2页浏览型号2SK4145-S19-AY的Datasheet PDF文件第3页浏览型号2SK4145-S19-AY的Datasheet PDF文件第4页浏览型号2SK4145-S19-AY的Datasheet PDF文件第5页浏览型号2SK4145-S19-AY的Datasheet PDF文件第6页浏览型号2SK4145-S19-AY的Datasheet PDF文件第7页 
DATA SHEET  
MOS FIELD EFFECT TRANSISTOR  
2SK4145  
SWITCHING  
N-CHANNEL POWER MOS FET  
DESCRIPTION  
The 2SK4145 is N-channel MOS Field Effect Transistor designed for high current switching applications.  
FEATURES  
Low on-state resistance  
RDS(on) = 10 mΩ MAX. (VGS = 10 V, ID = 42 A)  
Low input capacitance  
Ciss = 5300 pF TYP.  
ORDERING INFORMATION  
PART NUMBER  
LEAD PLATING  
Pure Sn (Tin)  
PACKING  
PACKAGE  
2SK4145-S19-AY Note  
Tube 50 p/tube  
TO-220 typ. 1.9 g  
Note Pb-free (This product does not contain Pb in the external electrode).  
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)  
Drain to Source Voltage (VGS = 0 V)  
Gate to Source Voltage (VDS = 0 V)  
Drain Current (DC) (TC = 25°C)  
Drain Current (pulse) Note1  
VDSS  
VGSS  
ID(DC)  
ID(pulse)  
PT1  
60  
V
V
20  
84  
A
215  
A
Total Power Dissipation (TC = 25°C)  
Total Power Dissipation (TA = 25°C)  
Channel Temperature  
84  
W
W
°C  
°C  
A
PT2  
1.5  
Tch  
150  
Storage Temperature  
Tstg  
55 to +150  
32  
Single Avalanche Current Note2  
Single Avalanche Energy Note2  
IAS  
EAS  
102  
mJ  
Notes 1. PW 10 μs, Duty Cycle 1%  
2. Starting Tch = 25°C, VDD = 30 V, RG = 25 Ω, VGS = 20 0 V, L = 100 μH  
THERMAL RESISTANCE  
Channel to Case Thermal Resistance  
Channel to Ambient Thermal Resistance  
Rth(ch-C)  
Rth(ch-A)  
1.49  
83.3  
°C/W  
°C/W  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all products and/or types are available in every country. Please check with an NEC Electronics  
sales representative for availability and additional information.  
Document No. D18760EJ2V0DS00 (2nd edition)  
Date Published June 2007 NS  
Printed in Japan  
2007  
The mark <R> shows major revised points.  
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.  

与2SK4145-S19-AY相关器件

型号 品牌 获取价格 描述 数据表
2SK4146 RENESAS

获取价格

MOS FIELD EFFECT TRANSISTOR
2SK4146-S19-AY RENESAS

获取价格

MOS FIELD EFFECT TRANSISTOR
2SK4147 RENESAS

获取价格

Old Company Name in Catalogs and Other Documents
2SK4147-T1B-AT NEC

获取价格

Small Signal Field-Effect Transistor, 0.5A I(D), 250V, 1-Element, N-Channel, Silicon, Meta
2SK4147-T2B-AT RENESAS

获取价格

500mA, 250V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, LEAD FREE, MINIMOLD, SC-96, 3 PIN
2SK4147-T2B-AT NEC

获取价格

Small Signal Field-Effect Transistor, 0.5A I(D), 250V, 1-Element, N-Channel, Silicon, Meta
2SK415 HITACHI

获取价格

HIGH SPEED POWER SWITCHING
2SK4150 RENESAS

获取价格

Silicon N Channel MOS FET High Speed Power Switching
2SK4150TZ-E RENESAS

获取价格

Silicon N Channel MOS FET High Speed Power Switching
2SK4151 RENESAS

获取价格

Silicon N Channel MOS FET High Speed Power Switching