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2N7002DWQ-13-F PDF预览

2N7002DWQ-13-F

更新时间: 2024-11-19 01:21:19
品牌 Logo 应用领域
美台 - DIODES 开关光电二极管晶体管
页数 文件大小 规格书
5页 217K
描述
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

2N7002DWQ-13-F 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:GREEN, ULTRA SMALL, PLASTIC PACKAGE-6
Reach Compliance Code:compliantECCN代码:EAR99
Factory Lead Time:16 weeks风险等级:5.77
其他特性:HIGH RELIABILITY配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
最小漏源击穿电压:60 V最大漏极电流 (Abs) (ID):0.23 A
最大漏极电流 (ID):0.23 A最大漏源导通电阻:7.5 Ω
FET 技术:METAL-OXIDE SEMICONDUCTOR最大反馈电容 (Crss):5 pF
JESD-30 代码:R-PDSO-G6JESD-609代码:e3
湿度敏感等级:1元件数量:2
端子数量:6工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):0.4 W参考标准:AEC-Q101
子类别:FET General Purpose Power表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:40
晶体管应用:SWITCHING晶体管元件材料:SILICON

2N7002DWQ-13-F 数据手册

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2N7002DW  
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET  
Product Summary  
Features  
Dual N-Channel MOSFET  
I
D max  
V(BR)DSS  
RDS(ON) max  
TA = +25°C  
Low On-Resistance  
Low Gate Threshold Voltage  
60V  
0.23A  
7.5@ VGS = 5V  
Low Input Capacitance  
Fast Switching Speed  
Description  
Low Input/Output Leakage  
This MOSFET has been designed to minimize the on-state resistance  
(RDS(ON)) and yet maintain superior switching performance, making it  
ideal for high efficiency power management applications.  
Ultra-Small Surface Mount Package  
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  
Halogen and Antimony Free. “Green” Device (Notes 3 & 4)  
Qualified to AEC-Q101 Standards for High Reliability  
Applications  
Mechanical Data  
Motor Control  
Power Management Functions  
Case: SOT363  
Case Material: Molded Plastic. “Green” Molding Compound.  
UL Flammability Classification Rating 94V-0  
Moisture Sensitivity: Level 1 per J-STD-020  
Terminals: Matte Tin Finish annealed over Alloy 42 leadframe  
(Lead Free Plating). Solderable per MIL-STD-202, Method 208  
Terminal Connections: See Diagram  
Weight: 0.006 grams (approximate)  
SOT363  
D2  
G1  
S1  
S2  
G2  
D1  
Top View  
Top View  
Internal Schematic  
Ordering Information (Note 5)  
Part Number  
2N7002DW-7-F  
2N7002DWQ-7-F  
2N7002DW-13-F  
2N7002DWQ-13-F  
Compliance  
Standard  
Automotive  
Standard  
Case  
Packaging  
SOT363  
SOT363  
SOT363  
SOT363  
3,000/Tape & Reel  
3,000/Tape & Reel  
10,000/Tape & Reel  
10,000/Tape & Reel  
Automotive  
Notes:  
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.  
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"  
and Lead-free.  
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and  
<1000ppm antimony compounds.  
4. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date  
Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.  
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.  
Marking Information  
K72 = Product Type Marking Code  
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)  
YM = Date Code Marking for CAT (Chengdu Assembly/ Test site)  
Y or Y = Year (ex: A = 2013)  
YM  
2 K 7  
YM  
2 K 7  
K72  
Y M  
K72  
Y M  
M = Month (ex: 9 = September)  
Date Code Key  
Year  
1998  
1999  
2000  
2001  
2002  
2003  
2004  
2011  
2012  
2013  
2014  
2015  
2016  
2017  
Code  
J
K
L
M
N
P
R
Y
Z
A
B
C
D
E
Month  
Code  
Jan  
1
Feb  
2
Mar  
3
Apr  
4
May  
5
Jun  
6
Jul  
7
Aug  
8
Sep  
9
Oct  
O
Nov  
N
Dec  
D
1 of 5  
www.diodes.com  
November 2013  
© Diodes Incorporated  
2N7002DW  
Document number: DS30120 Rev. 16 - 2  

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