2N7002E

更新时间： 2024-11-18 02:57:19

品牌	Logo	应用领域
美台 - DIODES		晶体晶体管开关光电二极管
页数	文件大小	规格书
4页	411K
描述
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

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中文翻译

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数据手册

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2N7002E 数据手册

SPICE MODEL: 2N7002E

2N7002E

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT

TRANSISTOR

Features

Low On-Resistance: R_DS(ON)

SOT-23

Low Gate Threshold Voltage

Low Input Capacitance

Dim

Min

0.37

1.20

2.30

0.89

0.45

1.78

2.80

0.013

0.903

0.45

0.085

0°

Max

0.51

1.40

2.50

1.03

0.60

2.05

3.00

0.10

1.10

0.61

0.180

8°

Fast Switching Speed

Low Input/Output Leakage

Lead Free/RoHS Compliant (Note 2)

TOP VIEW

Mechanical Data

Case: SOT-23

Case Material: UL Flammability Classification Rating 94V-0

Moisture sensitivity: Level 1 per J-STD-020C

Terminals: Solderable per MIL-STD-202, Method 208

Lead Free Plating (Matte Tin Finish annealed

over Alloy 42 leadframe).

Terminal Connections: See Diagram

Marking (See Page 2): K7B

All Dimensions in mm

Ordering & Date Code Information: See Page 2

Weight: 0.008 grams (approx.)

@ T_A= 25°C unless otherwise specified

Symbol

Maximum Ratings

Characteristic

Value

Units

V_DSS

V_DGR

Drain-Source Voltage

Drain-Gate Voltage R_GS£ 1.0MW

Gate-Source Voltage

Continuous

Pulsed

±20

±40

V_GSS

I_D

°C/W

°C

Drain Current

Continuous

240

300

P_d

Total Power Dissipation (Note 1)

Thermal Resistance, Junction to Ambient

Operating and Storage Temperature Range

qJA

417

T_j, T_STG

-55 to +150

Note: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout

document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.

2. No purposefully added lead.

DS30376 Rev. 5 - 2

1 of 4

2N7002E

www.diodes.com

ã Diodes Incorporated

12 3 4

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