2N7002E
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Features
Mechanical Data
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Low On-Resistance: RDS(ON)
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Case: SOT-23
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Lead, Halogen and Antimony Free, RoHS Compliant "Green"
Device (Notes 2 and 4)
Case Material: UL Flammability Classification Rating 94V-0
Moisture sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish annealed over Alloy 42 leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Marking Information: See Page 3
Ordering Information: See Page 3
Weight: 0.008 grams (approximate)
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SOT-23
D
S
G
TOP VIEW
Pin Out Configuration
TOP VIEW
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Drain-Source Voltage
Symbol
VDSS
Value
60
Units
V
V
60
Drain-Gate Voltage RGS ≤ 1.0MΩ
VDGR
Gate-Source Voltage
Continuous
Pulsed
Continuous
±20
±40
240
V
VGSS
ID
Drain Current
mA
Thermal Characteristics @TA = 25°C unless otherwise specified
Characteristic
Total Power Dissipation (Note 1)
Symbol
Value
300
Units
mW
°C/W
°C
PD
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
417
RθJA
-55 to +150
TJ, TSTG
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 3)
Symbol Min
Typ Max Unit
Test Condition
Drain-Source Breakdown Voltage
60
70
V
⎯
1.0
500
BVDSS
VGS = 0V, ID = 10μA
µA
⎯
⎯
Zero Gate Voltage Drain Current
@ TC
@ TC = 125°C
=
25°C
IDSS
V
DS = 60V, VGS = 0V
Gate-Body Leakage
±10
nA
⎯
⎯
⎯
1.6
2.0
IGSS
V
GS = ±15V, VDS = 0V
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
1.0
2.5
V
VGS(th)
VDS = VGS, ID = 250μA
VGS = 10V, ID = 250mA
VGS = 4.5V, ID = 200mA
VGS = 10V, VDS = 7.5V
VDS =10V, ID = 0.2A
3
4
⎯
⎯
0.8
80
Ω
Static Drain-Source On-Resistance
@ TJ = 25°C
RDS (ON)
On-State Drain Current
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance
1.0
A
⎯
⎯
ID(ON)
gFS
mS
⎯
22
11
50
25
pF
pF
pF
⎯
⎯
⎯
Ciss
Coss
Crss
V
DS = 25V, VGS = 0V, f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
2.0
5.0
7.0
11
20
20
ns
ns
⎯
⎯
tD(ON)
V
DD = 30V, ID = 0.2A,
Turn-Off Delay Time
RL = 150Ω, VGEN = 10V, RGEN = 25Ω
tD(OFF)
Notes:
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can
be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead. Halogen and Antimony Free.
3. Short duration pulse test used to minimize self-heating effect.
4. Product manufactured with Data Code V12 (week 50, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date Code
V12 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
1 of 4
www.diodes.com
June 2010
© Diodes Incorporated
2N7002E
Document number: DS30376 Rev. 8 - 2
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