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2N7002F215 PDF预览

2N7002F215

更新时间: 2024-11-21 12:52:31
品牌 Logo 应用领域
恩智浦 - NXP 晶体晶体管场效应晶体管
页数 文件大小 规格书
12页 100K
描述
N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.

2N7002F215 数据手册

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2N7002F  
N-channel TrenchMOS FET  
Rev. 03 — 28 April 2006  
Product data sheet  
1. Product profile  
1.1 General description  
N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using  
TrenchMOS technology.  
1.2 Features  
Logic level threshold compatible  
Surface-mounted package  
Very fast switching  
TrenchMOS technology  
1.3 Applications  
Logic level translator  
High-speed line driver  
1.4 Quick reference data  
VDS 60 V  
RDSon 2 Ω  
ID 475 mA  
Ptot 0.83 W  
2. Pinning information  
Table 1:  
Pinning  
Pin  
1
Description  
gate (G)  
Simplified outline  
Symbol  
D
S
3
2
source (S)  
drain (D)  
3
G
1
2
mbb076  
SOT23  

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