Datasheet > 2N7002F215

2N7002F215

更新时间： 2022-05-20 01:45:03

品牌	Logo	应用领域
恩智浦 - NXP		晶体晶体管场效应晶体管
页数	文件大小	规格书
12页	100K
描述
N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.

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2N7002F215 数据手册

2N7002F

N-channel TrenchMOS FET

Rev. 03 — 28 April 2006

Product data sheet

1. Product proﬁle

1.1 General description

N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using

TrenchMOS technology.

1.2 Features

■ Logic level threshold compatible

■ Surface-mounted package

■ Very fast switching

■ TrenchMOS technology

1.3 Applications

■ Logic level translator

■ High-speed line driver

1.4 Quick reference data

■ V_DS≤ 60 V

■ R_DSon≤ 2 Ω

■ I_D≤ 475 mA

■ P_tot≤ 0.83 W

2. Pinning information

Table 1:

Pinning

Description

gate (G)

Simpliﬁed outline

Symbol

source (S)

drain (D)

mbb076

SOT23

12 3 4 5 6 7...12

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