Datasheet > 2N7002K

2N7002K

更新时间： 2024-10-30 12:53:23

品牌	Logo	应用领域
TYSEMI		晶体栅极晶体管开关光电二极管 PC
页数	文件大小	规格书
3页	438K
描述
Low On-Resistance: RDS(ON) Low Gate Threshold Voltage Low Input Capacitance

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2N7002K 数据手册

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Product specification

2N7002K

SOT-23

Unit: mm

+0.1

-0.1

2.9

0.4

Features

+0.1

-0.1

Low On-Resistance: RDS(ON)

Low Gate Threshold Voltage

Low Input Capacitance

Fast Switching Speed

Low Input/Output Leakage

+0.1

0.95

-0.1

+0.05

0.1

-0.01

+0.1

-0.1

1.9

Drain

1.Base

1 GATE

Gate

2.Emitter

2 SOURCE

3.collector

3 DRAIN

Gate

Protection

Diode

Source

Absolute Maximum Ratings Ta=25

Parameter

Drain-Source Voltage

Symbol

VDSS

Rating

Unit

VGSS

Gate-Source Voltage

DrainCurrent

-Continuous

(Note 2)

300

(Note 1)

-Pulsed

800

PowerDissipation

350

(Note 1)

Thermal Resistance, Junction to Ambient

Operating and Storage Temperature Range

357

Tj, TSTG

-65 to +150

Device mounted on FR-4 PCB.

Notes: 1.

2. Pulse width £10mS, Duty Cycle £1%.

Electrical Characteristics Ta = 25

Parameter

Symbol

Testconditons

VGS = 0V, ID = 10

Min

Typ

1.6

Max

Unit

Drain-Source Breakdown Voltage

VDSS

IDSS

(Note 3)

Zero Gate Voltage Drain Current (Note 3)

(Note 3)

VDS = 60V, VGS = 0V

VGS = 20V, VDS = 0V

VDS = 10V, ID = 1mA

VGS = 10V, ID = 0.5A

VGS = 5V, ID = 0.05A

VGS = 10V, VDS = 0 .2A

1.0

Gate-Body Leakage

Gate Threshold Voltage

IGSS

(Note 3)

VGS(th)

1.0

8 0

2.5

2.0

3.0

Static Drain-Source On-Resistance (Note 3)

RDS (ON)

(Note 3)

Forward Transfer Admittance

Input Capacitance

|Yfs|

Ciss

Coss

Crss

m s

VDS = 25V, VGS = 0V,f = 1.0MHz

Output Capacitance

Reverse Transfer Capacitance

5.0

Note: 3.

Short duration test pulse used to minimize self-heating effect.

Marking

702.

http://www.twtysemi.com

sales@twtysemi.com

1 of 3

4008-318-123

12 3

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