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2N7002HE PDF预览

2N7002HE

更新时间: 2024-11-19 17:01:27
品牌 Logo 应用领域
银河微电 - BL Galaxy Electrical /
页数 文件大小 规格书
5页 576K
描述
0.4A, 60V, 0.5W, N Channel, Small Signal MOSFETs

2N7002HE 数据手册

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N-Channel Enhancement Mode MOSFET  
2N7002HE  
Features  
Low on-resistance  
ESD protected gate up to 2kV HBM  
High-speed switching  
Drive circuits can be simple  
Parallel use is easy  
Typical Applications  
N-channel enhancement mode effect transistor  
Switching application  
Mechanical Data  
Case: SOT-89  
Molding Compound: UL Flammability Classification Rating 94V-0  
Terminals: Matte Tin-Plated Leads, Solderability-per MIL-STD-202, Method 208  
SOT-89  
Ordering Information  
Part Number  
Package  
Shipping Quantity  
Marking Code  
2N7002HE  
SOT-89  
1000 pcs / Tape & Reel  
7002K  
Maximum Ratings (@ TA = 25°C unless otherwise specified)  
Parameter Symbol  
Value  
Unit  
Drain-Source Voltage  
Gate -Source Voltage  
VDSS  
VGSS  
ID  
60  
V
V
±20  
400  
800  
Continuous Drain Current  
Pulsed Drain Current  
mA  
mA  
IDM  
Thermal Characteristics  
Parameter  
Symbol  
Value  
Unit  
Power Dissipation (TA = 25°C )  
PD  
RθJA  
TJ  
0.5  
W
Thermal Resistance Junction-to-Air  
Operating Junction Temperature Range  
Storage Temperature Range  
250  
°C /W  
°C  
-55 ~ +150  
-55 ~ +150  
TSTG  
°C  
MTM0521A: August 2023 [2.0]  
www.gmesemi.com  
1

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