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2N7002K PDF预览

2N7002K

更新时间: 2024-10-30 06:25:47
品牌 Logo 应用领域
WEITRON 晶体晶体管开关光电二极管PC
页数 文件大小 规格书
6页 813K
描述
N-Channel Enhancement Mode Power MOSFET

2N7002K 数据手册

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2N7002K  
N-Channel Enhancement  
Mode Power MOSFET  
3 DRAIN  
DRAIN CURRENT  
640m AMPERES  
1
P b  
Lead(Pb)-Free  
GATE  
*
DRAIN SOURCE VOLTAGE  
60 VOLTAGE  
* Gate  
Pretection  
Diode  
2
SOURCE  
Description:  
The 2N7002K utilized advanced processing  
techniques to achieve the lowest possible on-resistance,  
extr nt and cost-e ectiveness device.  
3
1
2
The 2N7002K is universally used for all commercial-  
industrial applications.  
SOT-23  
Features:  
*Simple Drive Requirement  
*Small Package Outline  
Maximum Ratings(TA=25℃ Unless Otherwise Specified)  
Rating  
Symbol  
Value  
60  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
VDS  
VGS  
V
20  
Continuous Drain Current3,VGS @10V(TA  
640  
500  
950  
I D  
mA  
,VGS @10V(TA  
Pulsed Drain Current1, 2  
I DM  
PD  
Tota l Po wer Dis sipation(TA=25˚C )  
1.38  
90  
W
˚C/W  
˚C  
3
Maximum Junction-ambient  
R θJA  
TJ  
Operating Junction Temperature Range  
Storage Temperature Range  
+150  
-55~+150  
2500  
Tstg  
ESD  
˚C  
Gate−Source ESD Rating (HBM, Method 3015)  
V
Device Marking  
2N7002K = RK  
WEITRON  
http:www.weitron.com.tw  
1/6  
Rev.A 07-Aug-08  

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